中国物理B ›› 2016, Vol. 25 ›› Issue (10): 106802-106802.doi: 10.1088/1674-1056/25/10/106802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Optical absorption enhancement in slanted silicon nanocone hole arrays for solar photovoltaics

Shu-Yuan Zhang(张淑媛), Wen Liu(刘雯), Zhao-Feng Li(李兆峰), Min Liu(刘敏), Yu-Sheng Liu(刘雨生), Xiao-Dong Wang(王晓东), Fu-Hua Yang(杨富华)   

  1. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2016-05-11 修回日期:2016-06-17 出版日期:2016-10-05 发布日期:2016-10-05
  • 通讯作者: Xiao-Dong Wang E-mail:xdwang@semi.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61274066, 61474115, and 61504138) and the National High Technology Research and Development Program of China (Grant No. 2014AA032602).

Optical absorption enhancement in slanted silicon nanocone hole arrays for solar photovoltaics

Shu-Yuan Zhang(张淑媛), Wen Liu(刘雯), Zhao-Feng Li(李兆峰), Min Liu(刘敏), Yu-Sheng Liu(刘雨生), Xiao-Dong Wang(王晓东), Fu-Hua Yang(杨富华)   

  1. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2016-05-11 Revised:2016-06-17 Online:2016-10-05 Published:2016-10-05
  • Contact: Xiao-Dong Wang E-mail:xdwang@semi.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61274066, 61474115, and 61504138) and the National High Technology Research and Development Program of China (Grant No. 2014AA032602).

摘要: We investigate slanted silicon nanocone hole arrays as light absorbing structures for solar photovoltaics via simulation. With only 1-μm equivalent thickness, a maximum short-circuit current density of 34.9 mA/cm2 is obtained. Moreover, by adding an Ag mirror under the whole structure, a short-circuit current density of 37.9 mA/cm2 is attained. It is understood that the optical absorption enhancement mainly results from three aspects. First, the silicon nanocone holes provide a highly efficient antireflection effect. Second, after breaking the geometric symmetry, the slanted silicon nanocone hole supports more resonant absorption modes than vertical structures. Third, the Fabry-Perot resonance enhances the light absorption after adding an Ag mirror.

关键词: photovoltaic, light-trapping structure, simulation

Abstract: We investigate slanted silicon nanocone hole arrays as light absorbing structures for solar photovoltaics via simulation. With only 1-μm equivalent thickness, a maximum short-circuit current density of 34.9 mA/cm2 is obtained. Moreover, by adding an Ag mirror under the whole structure, a short-circuit current density of 37.9 mA/cm2 is attained. It is understood that the optical absorption enhancement mainly results from three aspects. First, the silicon nanocone holes provide a highly efficient antireflection effect. Second, after breaking the geometric symmetry, the slanted silicon nanocone hole supports more resonant absorption modes than vertical structures. Third, the Fabry-Perot resonance enhances the light absorption after adding an Ag mirror.

Key words: photovoltaic, light-trapping structure, simulation

中图分类号:  (Texture)

  • 68.55.jm
88.30.gg (Design and simulation) 88.40.H- (Solar cells (photovoltaics))