›› 2014, Vol. 23 ›› Issue (9): 96203-096203.doi: 10.1088/1674-1056/23/9/096203

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask

陶涛a b, 智婷a b, 李民雪b c, 谢自力a b, 张荣a b, 刘斌a b, 李毅a b, 庄喆a b, 张国刚a b, 蒋府龙a b, 陈鹏a b, 郑有炓a b   

  1. a National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093, China;
    b Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China;
    c Ecomaterials and Renewable Energy Research Center (ERERC), Department of Physics, Nanjing University, Nanjing 210093, China
  • 收稿日期:2014-02-20 修回日期:2014-04-10 出版日期:2014-09-15 发布日期:2014-09-15
  • 基金资助:
    Project supported by the Special Funds for Major State Basic Research Project of China (Grant Nos. 2011CB301900, 2012CB619304, and 2010CB327504), the Hi-tech Research Project of China (Grant No. 2011AA03A103), the National Nature Science Foundation of China (Grant Nos. 60990311, 61274003, 60936004, and 61176063), the Program for New Century Excellent Talents in University of China (Grant No. NCET-11-0229), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2011010), the Funds of Key Laboratory of China (Grant No. 9140C140102120C14), and the Research Funds from NJU-Yangzhou Institute of Opto-electronics of China.

Enhancement in solar hydrogen generation efficiency using InGaN photoelectrode after surface roughening treatment with nano-sized Ni mask

Tao Tao (陶涛)a b, Zhi Ting (智婷)a b, Li Ming-Xue (李民雪)b c, Xie Zi-Li (谢自力)a b, Zhang Rong (张荣)a b, Liu Bin (刘斌)a b, Li Yi (李毅)a b, Zhuang Zhe (庄喆)a b, Zhang Guo-Gang (张国刚)a b, Jiang Fu-Long (蒋府龙)a b, Chen Peng (陈鹏)a b, Zheng You-Dou (郑有炓)a b   

  1. a National Laboratory of Solid Microstructures, Nanjing University, Nanjing 210093, China;
    b Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China;
    c Ecomaterials and Renewable Energy Research Center (ERERC), Department of Physics, Nanjing University, Nanjing 210093, China
  • Received:2014-02-20 Revised:2014-04-10 Online:2014-09-15 Published:2014-09-15
  • Contact: Xie Zi-Li E-mail:xzl@nju.edu.cn
  • Supported by:
    Project supported by the Special Funds for Major State Basic Research Project of China (Grant Nos. 2011CB301900, 2012CB619304, and 2010CB327504), the Hi-tech Research Project of China (Grant No. 2011AA03A103), the National Nature Science Foundation of China (Grant Nos. 60990311, 61274003, 60936004, and 61176063), the Program for New Century Excellent Talents in University of China (Grant No. NCET-11-0229), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2011010), the Funds of Key Laboratory of China (Grant No. 9140C140102120C14), and the Research Funds from NJU-Yangzhou Institute of Opto-electronics of China.

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摘要： A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching (ICP) surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of photocurrent is demonstrated in comparison with a planar one fabricated from the same parent wafer. Under identical illumination conditions in HBr solution, the incident photon conversion efficiency (IPCE) shows an enhancement with a factor of 3, which even exceed 54% at 400 nm wavelength. We believe the enhancement is attributed to several facts including improvement in absorption, reacting area, carrier localization and carrier lifetime.

关键词: photoelectrolysis, InGaN photoelectrode, surface roughening, hydrogen generation

Abstract: A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching (ICP) surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of photocurrent is demonstrated in comparison with a planar one fabricated from the same parent wafer. Under identical illumination conditions in HBr solution, the incident photon conversion efficiency (IPCE) shows an enhancement with a factor of 3, which even exceed 54% at 400 nm wavelength. We believe the enhancement is attributed to several facts including improvement in absorption, reacting area, carrier localization and carrier lifetime.

Key words: photoelectrolysis, InGaN photoelectrode, surface roughening, hydrogen generation

中图分类号:  (Complex nanostructures, including patterned or assembled structures)

  • 62.23.St
84.60.Jt (Photoelectric conversion) 81.07.-b (Nanoscale materials and structures: fabrication and characterization)