›› 2014, Vol. 23 ›› Issue (10): 107102-107102.doi: 10.1088/1674-1056/23/10/107102
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
余志强, 徐智谋, 武兴会
Yu Zhi-Qiang (余志强), Xu Zhi-Mou (徐智谋), Wu Xing-Hui (武兴会)
摘要: We perform the first-principles calculations within the framework of density functional theory to determine the electronic structure and optical properties of MgxZn1-xS bulk crystal. The results indicate that the electronic structure and optical properties of MgxZn1-xS bulk crystal are sensitive to the Mg impurity composition. In particular, the MgxZn1-xS bulk crystal displays a direct band structure and the band gap increases from 2.05 eV to 2.91 eV with Mg dopant composition value x increasing from 0 to 0.024. The S 3p electrons dominate the top of valence band, while the Zn 4s electrons and Zn 3p electrons occupy the bottom of conduction band in MgxZn1-xS bulk crystal. Moreover, the dielectric constant decreases and the optical absorption peak obviously has a blue shift. The calculated results provide important theoretical guidance for the applications of MgxZn1-xS bulk crystal in optical detectors.
中图分类号: (Electron density of states and band structure of crystalline solids)