Field-effect transistors based on two-dimensional materials for logic applications

doi:10.1088/1674-1056/22/9/098505

中国物理B ›› 2013, Vol. 22 ›› Issue (9): 98505-098505.doi: 10.1088/1674-1056/22/9/098505

所属专题： TOPICAL REVIEW — Low-dimensional nanostructures and devices

• TOPICAL REVIEW—Low-dimensional nanostructures and devices • 上一篇下一篇

Field-effect transistors based on two-dimensional materials for logic applications

王欣然, 施毅, 张荣

National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

收稿日期:2013-07-27 出版日期:2013-07-26 发布日期:2013-07-26
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2013CBA01600), the National Natural Science Foundation of China (Grant Nos. 61261160499 and 11274154), the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02707), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012302), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120091110028).

Field-effect transistors based on two-dimensional materials for logic applications

Wang Xin-Ran (王欣然), Shi Yi (施毅), Zhang Rong (张荣)

National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Received:2013-07-27 Online:2013-07-26 Published:2013-07-26
Contact: Wang Xin-Ran E-mail:xrwang@nju.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2013CBA01600), the National Natural Science Foundation of China (Grant Nos. 61261160499 and 11274154), the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02707), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012302), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120091110028).

摘要/Abstract

摘要： Field-effect transistors (FETs) for logic applications, based on two representative two-dimensional (2D) materials, graphene and MoS₂, are discussed. These materials have drastically different properties and require different considerations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can be used in logic applications. On the other hand, MoS₂ is a semiconductor, and its electron transport depends heavily on the surface properties, the number of layers, and the carrier density. Finally, we discuss the prospects for the future developments in 2D material transistors.

关键词: graphene, MoS₂, two-dimensional (2D) materials, field-effect transistors

Abstract: Field-effect transistors (FETs) for logic applications, based on two representative two-dimensional (2D) materials, graphene and MoS₂, are discussed. These materials have drastically different properties and require different considerations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can be used in logic applications. On the other hand, MoS₂ is a semiconductor, and its electron transport depends heavily on the surface properties, the number of layers, and the carrier density. Finally, we discuss the prospects for the future developments in 2D material transistors.

Key words: graphene, MoS₂, two-dimensional (2D) materials, field-effect transistors

中图分类号:

87.75.Hh

王欣然, 施毅, 张荣. Field-effect transistors based on two-dimensional materials for logic applications[J]. 中国物理B, 2013, 22(9): 98505-098505.

Wang Xin-Ran (王欣然), Shi Yi (施毅), Zhang Rong (张荣). Field-effect transistors based on two-dimensional materials for logic applications[J]. Chin. Phys. B, 2013, 22(9): 98505-098505.

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Field-effect transistors based on two-dimensional materials for logic applications

Field-effect transistors based on two-dimensional materials for logic applications

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