中国物理B ›› 2013, Vol. 22 ›› Issue (7): 76103-076103.doi: 10.1088/1674-1056/22/7/076103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Effect of Nano-SiO2 films on electron radiation induced conductivity of polyimide

岳龙, 吴宜勇, 孙承月, 石亚平, 肖景东, 何世禹   

  1. School of Materials Science & Engineering, Harbin Institute of Technology, Harbin 150001, China
  • 收稿日期:2013-01-03 修回日期:2013-03-05 出版日期:2013-06-01 发布日期:2013-06-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 51273052).

Effect of Nano-SiO2 films on electron radiation induced conductivity of polyimide

Yue Long (岳龙), Wu Yi-Yong (吴宜勇), Sun Cheng-Yue (孙承月), Shi Ya-Ping (石亚平), Xiao Jing-Dong (肖景东), He Shi-Yu (何世禹)   

  1. School of Materials Science & Engineering, Harbin Institute of Technology, Harbin 150001, China
  • Received:2013-01-03 Revised:2013-03-05 Online:2013-06-01 Published:2013-06-01
  • Contact: Wu Yi-Yong E-mail:wuyiyong2001@yahoo.com.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 51273052).

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摘要： The radiation induced conductivity (RIC) behaviors in nano-SiO2 deposited polyimide (PI) were investigated using in situ measurement technique. The results indicate that, by comparison with the case of virgin polyimide, the RIC in nano-SiO2/polyimide shows low steady state values. Moreover, the steady state RIC is a power function of the dose rate with a power index of 0.659, lower than that of 0.76 in the virgin polyimide. The interfacial barrier and trapping effects are the main reasons for the change. Meanwhile, both of the interfacial effects also result in a unipolar carrier transportation mechanism in nano-SiO2 deposited PI from the dipolar one in the virgin PI. The mechanisms of the RIC behaviors are discussed in the paper.

关键词: polyimide, radiation induced conductivity, Nano-SiO2

Abstract: The radiation induced conductivity (RIC) behaviors in nano-SiO2 deposited polyimide (PI) were investigated using in situ measurement technique. The results indicate that, by comparison with the case of virgin polyimide, the RIC in nano-SiO2/polyimide shows low steady state values. Moreover, the steady state RIC is a power function of the dose rate with a power index of 0.659, lower than that of 0.76 in the virgin polyimide. The interfacial barrier and trapping effects are the main reasons for the change. Meanwhile, both of the interfacial effects also result in a unipolar carrier transportation mechanism in nano-SiO2 deposited PI from the dipolar one in the virgin PI. The mechanisms of the RIC behaviors are discussed in the paper.

Key words: polyimide, radiation induced conductivity, Nano-SiO2

中图分类号:  (Theory and models of radiation effects)

  • 61.80.Az
61.82.-d (Radiation effects on specific materials) 78.70.-g (Interactions of particles and radiation with matter) 72.80.-r (Conductivity of specific materials)