Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition

doi:10.1088/1674-1056/22/5/058104

中国物理B ›› 2013, Vol. 22 ›› Issue (5): 58104-058104.doi: 10.1088/1674-1056/22/5/058104

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition

熊飞^{a b}, 杨涛^a, 宋肇宁^c, 杨培志^b

a Research Institute of Engineering and Technology, Yunnan University, Kunming 650091, China;
b Key Laboratory of Education Ministry for Advance Technique and Preparation of Renewable Energy Materials, Yunnan Normal University, Kunming 650092, China;
c Department of Physics and Astronomy, University of Toledo, Toledo OH 43606, USA

收稿日期:2012-07-18 修回日期:2012-11-23 出版日期:2013-04-01 发布日期:2013-04-01
基金资助:
Project supported by the Joint Fund of National Natural Science Foundation of China and Yunnan Province, China (Grant No. U1037604), the Applied Basic Research Foundations of Yunnan Province, China (Grant No. 2009CD003), and the Scientific Research Foundation of Yunnan University, China (Grant No. 2009E28Q).

Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition

Xiong Fei (熊飞)^{a b}, Yang Tao (杨涛)^a, Song Zhao-Ning (宋肇宁)^c, Yang Pei-Zhi (杨培志)^b

a Research Institute of Engineering and Technology, Yunnan University, Kunming 650091, China;
b Key Laboratory of Education Ministry for Advance Technique and Preparation of Renewable Energy Materials, Yunnan Normal University, Kunming 650092, China;
c Department of Physics and Astronomy, University of Toledo, Toledo OH 43606, USA

Received:2012-07-18 Revised:2012-11-23 Online:2013-04-01 Published:2013-04-01
Contact: Xiong Fei, Yang Pei-Zhi E-mail:f_xiong888@yahoo.com.cn; pzhyang@hotmail.com
Supported by:
Project supported by the Joint Fund of National Natural Science Foundation of China and Yunnan Province, China (Grant No. U1037604), the Applied Basic Research Foundations of Yunnan Province, China (Grant No. 2009CD003), and the Scientific Research Foundation of Yunnan University, China (Grant No. 2009E28Q).

摘要/Abstract

摘要： Self-assembled Ge nanodots with areal number density up to 2.33×10¹⁰ cm^-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge coverage, is observed to be limited mainly by the transformation from two-dimensional precursors to three-dimensional islands, and to be associated with the adatom behaviors of attachment and detachment from the islands. An unusual increasing temperature dependence of nanodot density is also revealed when high ion energy is employed in sputtering deposition, and is shown to be related with the breaking down of the superstrained wetting layer. This result is attributed to the interaction between energetic atoms and the growth surface, which mediates island nucleation.

关键词: Ge nanodot, self-organization, ion beam sputtering deposition, adatom behavior

Abstract: Self-assembled Ge nanodots with areal number density up to 2.33×10¹⁰ cm^-2 and aspect ratio larger than 0.12 are prepared by ion beam sputtering deposition. The dot density, a function of deposition rate and Ge coverage, is observed to be limited mainly by the transformation from two-dimensional precursors to three-dimensional islands, and to be associated with the adatom behaviors of attachment and detachment from the islands. An unusual increasing temperature dependence of nanodot density is also revealed when high ion energy is employed in sputtering deposition, and is shown to be related with the breaking down of the superstrained wetting layer. This result is attributed to the interaction between energetic atoms and the growth surface, which mediates island nucleation.

Key words: Ge nanodot, self-organization, ion beam sputtering deposition, adatom behavior

中图分类号: (Quantum dots)

81.07.Ta

68.37.Ps (Atomic force microscopy (AFM)) 78.30.-j (Infrared and Raman spectra)

熊飞, 杨涛, 宋肇宁, 杨培志. Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition[J]. 中国物理B, 2013, 22(5): 58104-058104.

Xiong Fei (熊飞), Yang Tao (杨涛), Song Zhao-Ning (宋肇宁), Yang Pei-Zhi (杨培志). Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition[J]. Chin. Phys. B, 2013, 22(5): 58104-058104.

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Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition

Density behaviors of Ge nanodots self-assembled by ion beam sputtering deposition

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