Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (4): 47305-047305.doi: 10.1088/1674-1056/22/4/047305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Influence of nanomechanical force on the electronic structure of InAs/GaAs quantum dots

宋鑫, 冯昊, 刘玉敏, 俞重远   

  1. State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications, Beijing 100876, China
  • 收稿日期:2012-08-22 修回日期:2012-09-26 出版日期:2013-03-01 发布日期:2013-03-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60908028, 60971068, 10979065, and 61275201), the Fundamental Research Funds for the Central Universities (Grant No. 2011RC0402), and the Program for New Century Excellent Talents in University (Grant No. NCET-10-0261).

Influence of nanomechanical force on the electronic structure of InAs/GaAs quantum dots

Song Xin (宋鑫), Feng Hao (冯昊), Liu Yu-Min (刘玉敏), Yu Zhong-Yuan (俞重远)   

  1. State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications, Beijing 100876, China
  • Received:2012-08-22 Revised:2012-09-26 Online:2013-03-01 Published:2013-03-01
  • Contact: Song Xin E-mail:songxinbupt@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 60908028, 60971068, 10979065, and 61275201), the Fundamental Research Funds for the Central Universities (Grant No. 2011RC0402), and the Program for New Century Excellent Talents in University (Grant No. NCET-10-0261).

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摘要： We show nanomechanical force is useful to dynamically control the optical response of self-assembled quantum dots, giving a method to shift electron and heavy hole levels, interval of electron and heavy hole energy levels, and the emission wavelength of quantum dots (QDs). The strain, the electron energy levels, and heavy hole energy levels of InAs/GaAs(001) quantum dots with vertical nanomechanical force are investigated. Both of the lattice mismatch and nanomechanical force are considered at the same time. The results show that the hydrostatic and the biaxial strains inside the QDs subjected to nanomechanical force vary with nanomechanical force. That gives the control for tailoring band gaps and optical response. Moreover, due to strain-modified energy, the band edge is also influenced by nanomechanical force. The nanomechanical force is shown to influence the band edge. As is well known, the band offset affects the electronic structure, which shows that the nanomechanical force is proved to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the nanomechanical force can be used to dynamically control the optics of quantum dots.

关键词: nanomechanical force, quantum dots, energy levels, electronic structure

Abstract: We show nanomechanical force is useful to dynamically control the optical response of self-assembled quantum dots, giving a method to shift electron and heavy hole levels, interval of electron and heavy hole energy levels, and the emission wavelength of quantum dots (QDs). The strain, the electron energy levels, and heavy hole energy levels of InAs/GaAs(001) quantum dots with vertical nanomechanical force are investigated. Both of the lattice mismatch and nanomechanical force are considered at the same time. The results show that the hydrostatic and the biaxial strains inside the QDs subjected to nanomechanical force vary with nanomechanical force. That gives the control for tailoring band gaps and optical response. Moreover, due to strain-modified energy, the band edge is also influenced by nanomechanical force. The nanomechanical force is shown to influence the band edge. As is well known, the band offset affects the electronic structure, which shows that the nanomechanical force is proved to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the nanomechanical force can be used to dynamically control the optics of quantum dots.

Key words: nanomechanical force, quantum dots, energy levels, electronic structure

中图分类号:  (Electronic transport in nanoscale materials and structures)

  • 73.63.-b
73.63.Kv (Quantum dots) 72.25.Dc (Spin polarized transport in semiconductors) 85.35.Gv (Single electron devices)