中国物理B ›› 2013, Vol. 22 ›› Issue (10): 109501-109501.doi: 10.1088/1674-1056/22/10/109501

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇    

Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility

耿超a b, 刘杰a, 习凯a b, 张战刚a b, 古松a b, 刘天奇a b   

  1. a Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
    b University of Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2013-01-29 修回日期:2013-03-06 出版日期:2013-08-30 发布日期:2013-08-30

Modeling and assessing the influence of linear energy transfer on multiple bit upset susceptibility

Geng Chao (耿超)a b, Liu Jie (刘杰)a, Xi Kai (习凯)a b, Zhang Zhan-Gang (张战刚)a b, Gu Song (古松)a b, Liu Tian-Qi (刘天奇)a b   

  1. a Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
    b University of Chinese Academy of Sciences, Beijing 100190, China
  • Received:2013-01-29 Revised:2013-03-06 Online:2013-08-30 Published:2013-08-30
  • Contact: Liu Jie E-mail:j.liu@impcas.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).

关键词: MUFPSA, LET, MBU, ion track structure

Abstract: The influence of the metric of linear energy transfer (LET) on single event upset (SEU), particularly multiple bit upset (MBU) in a hypothetical 90-nm static random access memory (SRAM) is explored. To explain the odd point of higher LET incident ion but induced lower cross section in the curve of SEU cross section, MBUs induced by incident ions 132Xe and 209Bi with the same LET but different energies at oblique incidence are investigated using multi-functional package for single event effect analysis (MUFPSA). In addition, a comprehensive analytical model of the radial track structure is incorporated into MUFPSA, which is a complementation for assessing and interpreting MBU susceptibility of SRAM. The results show that (i) with the increase of incident angle, MBU multiplicity and probability each present an increasing trend; (ii) due to the higher ion relative velocity and longer range of δ electrons, higher energy ions trigger the MBU with less probability than lower energy ions.

Key words: MUFPSA, LET, MBU, ion track structure

中图分类号:  (Observation and data reduction techniques; computer modeling and simulation)

  • 95.75.-z
61.82.Fk (Semiconductors) 24.10.Lx (Monte Carlo simulations (including hadron and parton cascades and string breaking models))