中国物理B ›› 2013, Vol. 22 ›› Issue (3): 37202-037202.doi: 10.1088/1674-1056/22/1/037202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Tandem organic light-emitting diode with molybdenum tri-oxide thin film interconnector layer

路飞平, 王倩, 周翔   

  1. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
  • 收稿日期:2012-09-24 修回日期:2012-11-15 出版日期:2013-02-01 发布日期:2013-02-01
  • 基金资助:
    Project supported by the Doctoral Foundation of the Ministry of Education of China (Grant No. 20100171110025), the State Key Laboratory of Optoelectronic Materials and Technologies, China (Grant No. 2010-RC-3-1), and the Fundamental Research Funds for the Central Universities, China (Grant No. 09lgpy25).

Tandem organic light-emitting diode with molybdenum tri-oxide thin film interconnector layer

Lu Fei-Ping (路飞平), Wang Qian (王倩), Zhou Xiang (周翔)   

  1. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
  • Received:2012-09-24 Revised:2012-11-15 Online:2013-02-01 Published:2013-02-01
  • Contact: Zhou Xiang E-mail:stszx@mail.sysu.edu.cn
  • Supported by:
    Project supported by the Doctoral Foundation of the Ministry of Education of China (Grant No. 20100171110025), the State Key Laboratory of Optoelectronic Materials and Technologies, China (Grant No. 2010-RC-3-1), and the Fundamental Research Funds for the Central Universities, China (Grant No. 09lgpy25).

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摘要： A 10-nm thickness molybdenum tri-oxide (MoO3) thin film was used as the interconnector layer in tandem organic light-emitting devices (OLEDs). The tandem OLEDs with two identical emissive units consisting of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB)/tris(8-hydroxyquinoline) aluminum (Alq3) exhibited current efficiency-current density characteristics superior to the conventional single-unit devices. At 20 mA/cm2, the current efficiency of the tandem OLEDs using the interconnector layers of MoO3 thin film was about 4.0 cd/A, which is about twice of that of the corresponding conventional single-unit device (1.8 cd/A). The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200 cd/m2. The experimental results demonstrated that a MoO3 thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs. Such an interconnector layer can be easily fabricated by simple thermal evaporation, greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers. A possible explanation was proposed for the carrier generation of the MoO3 interconnector layer.

关键词: tandem organic light-emitting device, MoO3 thin film, interconnector layer

Abstract: A 10-nm thickness molybdenum tri-oxide (MoO3) thin film was used as the interconnector layer in tandem organic light-emitting devices (OLEDs). The tandem OLEDs with two identical emissive units consisting of N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB)/tris(8-hydroxyquinoline) aluminum (Alq3) exhibited current efficiency–current density characteristics superior to the conventional single-unit devices. At 20 mA/cm2, the current efficiency of the tandem OLEDs using the interconnector layers of MoO3 thin film was about 4.0 cd/A, which is about twice of that of the corresponding conventional single-unit device (1.8 cd/A). The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200 cd/m2. The experimental results demonstrated that a MoO3 thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs. Such an interconnector layer can be easily fabricated by simple thermal evaporation, greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers. A possible explanation was proposed for the carrier generation of the MoO3 interconnector layer.

Key words: tandem organic light-emitting device, MoO3 thin film, interconnector layer

中图分类号:  (Polymers; organic compounds (including organic semiconductors))

  • 72.80.Le
78.60.Fi (Electroluminescence) 85.60.Jb (Light-emitting devices)