Preparing Cu2ZnSnS4 films using the co-electro-deposition method with ionic liquids

doi:10.1088/1674-1056/21/5/058801

中国物理B ›› 2012, Vol. 21 ›› Issue (5): 58801-058801.doi: 10.1088/1674-1056/21/5/058801

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇

Preparing Cu₂ZnSnS₄ films using the co-electro-deposition method with ionic liquids

陈永生,王英君,李瑞,谷锦华,卢景霄,杨仕娥

Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China

收稿日期:2011-06-23 修回日期:2012-04-27 出版日期:2012-04-01 发布日期:2012-04-01
基金资助:
Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00706), the National Natural Science Foundation of China (Grant No. 51007082), and the Basis and Frontier Technology Research Plan Projects of Henan Province, China (Grant No. 102300410075).

Preparing Cu₂ZnSnS₄ films using the co-electro-deposition method with ionic liquids

Chen Yong-Sheng(陈永生)^†, Wang Ying-Jun(王英君), Li Rui(李瑞), Gu Jin-Hua(谷锦华), Lu Jing-Xiao(卢景霄), and Yang Shi-E(杨仕娥)

Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China

Received:2011-06-23 Revised:2012-04-27 Online:2012-04-01 Published:2012-04-01
Supported by:
Project supported by the National Key Basic Research Program of China (Grant No. 2011CBA00706), the National Natural Science Foundation of China (Grant No. 51007082), and the Basis and Frontier Technology Research Plan Projects of Henan Province, China (Grant No. 102300410075).

摘要/Abstract

摘要： Cu₂ZnSnS₄ (CZTS) films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400℃ for 30 min using nitrogen as the protective gas. It is found that the CZTS film synthesized at Cu/(Zn+Sn)=0.71 has a kesterite structure, a bandgap of about 1.51 eV, and an absorption coefficient of the order of 10⁴ cm^-1. This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.

关键词: sulfurization, Cu₂ZnSnS₄, co-electrodeposition

Abstract: Cu₂ZnSnS₄ (CZTS) films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400℃ for 30 min using nitrogen as the protective gas. It is found that the CZTS film synthesized at Cu/(Zn+Sn)=0.71 has a kesterite structure, a bandgap of about 1.51 eV, and an absorption coefficient of the order of 10⁴ cm^-1. This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.

Key words: sulfurization, Cu₂ZnSnS₄, co-electrodeposition

中图分类号: (Thin film Cu-based I-III-VI2 solar cells)

88.40.jn

88.40.-j (Solar energy) 81.15.Cd (Deposition by sputtering)

陈永生,王英君,李瑞,谷锦华,卢景霄,杨仕娥. Preparing Cu₂ZnSnS₄ films using the co-electro-deposition method with ionic liquids[J]. 中国物理B, 2012, 21(5): 58801-058801.

Chen Yong-Sheng(陈永生), Wang Ying-Jun(王英君), Li Rui(李瑞), Gu Jin-Hua(谷锦华), Lu Jing-Xiao(卢景霄), and Yang Shi-E(杨仕娥) . Preparing Cu₂ZnSnS₄ films using the co-electro-deposition method with ionic liquids[J]. Chin. Phys. B, 2012, 21(5): 58801-058801.

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Preparing Cu₂ZnSnS₄ films using the co-electro-deposition method with ionic liquids

Preparing Cu₂ZnSnS₄ films using the co-electro-deposition method with ionic liquids

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