中国物理B ›› 2012, Vol. 21 ›› Issue (11): 118501-118501.doi: 10.1088/1674-1056/21/11/118501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Deterministic method study of the impact of the Pauli Principle in double-gate MOSFETs

赵凯a b, Christoph Jungemannb, 刘晓彦a   

  1. a Institute of Microelectronics, Peking University, Beijing 100871, China;
    b Chair of Electromagnetic Theory, RWTH Aachen University, D-52056 Aachen, Germany
  • 收稿日期:2012-04-11 修回日期:2012-05-03 出版日期:2012-10-01 发布日期:2012-10-01

Deterministic method study of the impact of the Pauli Principle in double-gate MOSFETs

Zhao Kai (赵凯)a b, Christoph Jungemannb, Liu Xiao-Yan (刘晓彦 )a   

  1. a Institute of Microelectronics, Peking University, Beijing 100871, China;
    b Chair of Electromagnetic Theory, RWTH Aachen University, D-52056 Aachen, Germany
  • Received:2012-04-11 Revised:2012-05-03 Online:2012-10-01 Published:2012-10-01
  • Contact: Zhao Kai E-mail:k.zhao.chn@gmail.com

摘要: The Pauli principle is included in a multisubband deterministic solver for two-dimensional devices without approximations. The nonlinear Boltzmann equations are treated properly without compromising on accuracy, convergence, or CPU time. The simulation results indicate the significant impact of the Pauli principle on the transport properties of the quasi-2D electron gas, especially for the on state.

关键词: Pauli principle, two-dimensional MOSFET, degeneracy, Fourier harmonics expansion

Abstract: The Pauli principle is included in a multisubband deterministic solver for two-dimensional devices without approximations. The nonlinear Boltzmann equations are treated properly without compromising on accuracy, convergence, or CPU time. The simulation results indicate the significant impact of the Pauli principle on the transport properties of the quasi-2D electron gas, especially for the on state.

Key words: Pauli principle, two-dimensional MOSFET, degeneracy, Fourier harmonics expansion

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De