中国物理B ›› 2012, Vol. 21 ›› Issue (10): 108506-108506.doi: 10.1088/1674-1056/21/10/108506

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High-contrast top-emitting organic light-emitting devices

陈淑芬, 陈春燕, 杨洋, 谢军, 黄维, 石弘颖, 程凡   

  1. Key Laboratory for Organic Electronics and Information Displays of Jiangsu Province, Institute ofAdvanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
  • 收稿日期:2012-03-14 修回日期:2012-05-22 出版日期:2012-09-01 发布日期:2012-09-01
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant No. 2009CB930600), the National Natural Science Foundation of China (Grant Nos. 60907047, 61274065, 60977024, 21101095, 20974046, 21003076, 51173081, and 61136003), the Specialized Research Foundation for the Doctoral Program of Higher Education, China (Grant No. 20093223120003), the Natural Science Foundation of Institutions of Higher Education of Jiangsu Province, China (Grant Nos. SJ209003, 09KJB150009, 10KJB510013, and TJ209035), the "Qing Lan" Program of Jiangsu Province, China, and the Program of Nanjing University of Posts and Telecommunications, China (Grant Nos. NY210015, NY211069, and NY210040).

High-contrast top-emitting organic light-emitting devices

Chen Shu-Fen (陈淑芬), Chen Chun-Yan (陈春燕), Yang Yang (杨洋), Xie Jun (谢军), Huang Wei (黄维), Shi Hong-Ying (石弘颖), Cheng Fan (程凡)   

  1. Key Laboratory for Organic Electronics and Information Displays of Jiangsu Province, Institute ofAdvanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
  • Received:2012-03-14 Revised:2012-05-22 Online:2012-09-01 Published:2012-09-01
  • Contact: Huang Wei E-mail:wei-huang@njupt.edu.cn
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant No. 2009CB930600), the National Natural Science Foundation of China (Grant Nos. 60907047, 61274065, 60977024, 21101095, 20974046, 21003076, 51173081, and 61136003), the Specialized Research Foundation for the Doctoral Program of Higher Education, China (Grant No. 20093223120003), the Natural Science Foundation of Institutions of Higher Education of Jiangsu Province, China (Grant Nos. SJ209003, 09KJB150009, 10KJB510013, and TJ209035), the "Qing Lan" Program of Jiangsu Province, China, and the Program of Nanjing University of Posts and Telecommunications, China (Grant Nos. NY210015, NY211069, and NY210040).

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摘要： In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer. The contrast-enhancement stack consists of a thin metal anode layer, a dielectric bilayer, and a thick metal underlayer. The resulting device, with the optimized contrast-enhancement stack thicknesses of Ni (30 nm)/MgF2 (62 nm)/ZnS (16 nm)/Ni (20 nm) and the 25-nm-thick ZnS anti-reflection layer, achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A (at 62.3 mA/cm2) together with a very stable chromaticity. The contrast ratio reaches 561:1 at an on-state brightness of 1000 cd/m2 under an ambient illumination of 140 lx. In addition, the anti-reflection layer can also enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.

关键词: top-emitting organic light-emitting device, contrast-enhancement stack, anti-reflection

Abstract: In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer. The contrast-enhancement stack consists of a thin metal anode layer, a dielectric bilayer, and a thick metal underlayer. The resulting device, with the optimized contrast-enhancement stack thicknesses of Ni (30 nm)/MgF2 (62 nm)/ZnS (16 nm)/Ni (20 nm) and the 25-nm-thick ZnS anti-reflection layer, achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A (at 62.3 mA/cm2) together with a very stable chromaticity. The contrast ratio reaches 561:1 at an on-state brightness of 1000 cd/m2 under an ambient illumination of 140 lx. In addition, the anti-reflection layer can also enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.

Key words: top-emitting organic light-emitting device, contrast-enhancement stack, anti-reflection

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
78.60.Fi (Electroluminescence) 78.66.Qn (Polymers; organic compounds) 78.40.-q (Absorption and reflection spectra: visible and ultraviolet)