中国物理B ›› 2011, Vol. 20 ›› Issue (6): 60702-060702.doi: 10.1088/1674-1056/20/6/060702

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A k-band broadband monolithic distributed frequency multiplier based on nonlinear transmission line

董军荣1, 杨浩1, 张海英1, 田超1, 郭天义1, 黄杰2   

  1. (1)Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (2)Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;School of Physical Science and Technology, Southwest University, Chongqing 400715, China
  • 收稿日期:2010-11-17 修回日期:2011-02-21 出版日期:2011-06-15 发布日期:2011-06-15
  • 基金资助:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 60806024), the Fundamental Research Funds for Central Universities, China (Grant No. XDJK2009C020), and the Singapore{China Joint Research Project (Grant No. 2009DFA12130).

A k-band broadband monolithic distributed frequency multiplier based on nonlinear transmission line

Huang Jie(黄杰)a)b)†, Dong Jun-Rong(董军荣)a), Yang Hao(杨浩)a), Zhang Hai-Ying(张海英)a), Tian Chao(田超) a), and Guo Tian-Yi(郭天义)a)   

  1. a Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; b School of Physical Science and Technology, Southwest University, Chongqing 400715, China
  • Received:2010-11-17 Revised:2011-02-21 Online:2011-06-15 Published:2011-06-15
  • Supported by:
    Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 60806024), the Fundamental Research Funds for Central Universities, China (Grant No. XDJK2009C020), and the Singapore{China Joint Research Project (Grant No. 2009DFA12130).

摘要: A fabrication technology of GaAs planar Schottky varactor diode (PSVD) is successfully developed and used to design and manufacture GaAs-based monolithic frequency multiplication based on 23-section nonlinear transmission lines (NLTLs) consisting of a coplanar waveguide transmission line and periodically distributed PSVDs. The throughout design and optimization procedure of 23-section monolithic NLTLs for frequency multiplication in the k-band range is based on a large signal equivalent model of PSVD extracted from small-signal S-parameter measurements. This paper reports that the distributed SPVD exhibits a capacitance ratio of 5.4, a normalized capacitance of 0.86 fF/μ2 and a breakdown voltage in excess of 22 V. The integrated 23-section NLTLs fed by 20-dBm input power demonstrates a 26-GHz peak second harmonic output power of 14-dBm with 25.3% conversion efficiency in the second harmonic output frequency range of 6 GHz-26 GHz.

关键词: nonlinear transmission line, frequency multiplication, harmonic generation, planar Schottky varactor diode

Abstract: A fabrication technology of GaAs planar Schottky varactor diode (PSVD) is successfully developed and used to design and manufacture GaAs-based monolithic frequency multiplication based on 23-section nonlinear transmission lines (NLTLs) consisting of a coplanar waveguide transmission line and periodically distributed PSVDs. The throughout design and optimization procedure of 23-section monolithic NLTLs for frequency multiplication in the k-band range is based on a large signal equivalent model of PSVD extracted from small-signal S-parameter measurements. This paper reports that the distributed SPVD exhibits a capacitance ratio of 5.4, a normalized capacitance of 0.86 fF/μ2 and a breakdown voltage in excess of 22 V. The integrated 23-section NLTLs fed by 20-dBm input power demonstrates a 26-GHz peak second harmonic output power of 14-dBm with 25.3% conversion efficiency in the second harmonic output frequency range of 6 GHz-26 GHz.

Key words: nonlinear transmission line, frequency multiplication, harmonic generation, planar Schottky varactor diode

中图分类号:  (Infrared, submillimeter wave, microwave, and radiowave sources)

  • 07.57.Hm
84.40.Dc (Microwave circuits) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Hi (Surface barrier, boundary, and point contact devices)