中国物理B ›› 2011, Vol. 20 ›› Issue (6): 60702-060702.doi: 10.1088/1674-1056/20/6/060702
董军荣1, 杨浩1, 张海英1, 田超1, 郭天义1, 黄杰2
Huang Jie(黄杰)a)b)†, Dong Jun-Rong(董军荣)a), Yang Hao(杨浩)a), Zhang Hai-Ying(张海英)a), Tian Chao(田超) a), and Guo Tian-Yi(郭天义)a)
摘要: A fabrication technology of GaAs planar Schottky varactor diode (PSVD) is successfully developed and used to design and manufacture GaAs-based monolithic frequency multiplication based on 23-section nonlinear transmission lines (NLTLs) consisting of a coplanar waveguide transmission line and periodically distributed PSVDs. The throughout design and optimization procedure of 23-section monolithic NLTLs for frequency multiplication in the k-band range is based on a large signal equivalent model of PSVD extracted from small-signal S-parameter measurements. This paper reports that the distributed SPVD exhibits a capacitance ratio of 5.4, a normalized capacitance of 0.86 fF/μ2 and a breakdown voltage in excess of 22 V. The integrated 23-section NLTLs fed by 20-dBm input power demonstrates a 26-GHz peak second harmonic output power of 14-dBm with 25.3% conversion efficiency in the second harmonic output frequency range of 6 GHz-26 GHz.
中图分类号: (Infrared, submillimeter wave, microwave, and radiowave sources)