中国物理B ›› 2011, Vol. 20 ›› Issue (4): 40701-040701.doi: 10.1088/1674-1056/20/4/040701

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Measurements of electron–phonon coupling factor and interfacial thermal resistance of metallic nano-films using a transient thermoreflectance technique

王玮1, 王海东2, 马维刚2, 过增元2, 张兴2   

  1. (1)Institute of Microelectronics, Peking University, Beijing 100871, China; (2)Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China
  • 收稿日期:2010-08-27 修回日期:2010-10-26 出版日期:2011-04-15 发布日期:2011-04-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 50730006, 50976053, and 50906042).

Measurements of electron–phonon coupling factor and interfacial thermal resistance of metallic nano-films using a transient thermoreflectance technique

Wang Hai-Dong(王海东)a), Ma Wei-Gang(马维刚) a), Guo Zeng-Yuan(过增元)a), Zhang Xing(张兴)a)†, and Wang Wei(王玮)b)   

  1. a Key Laboratory for Thermal Science and Power Engineering of Ministry of Education, Department of Engineering Mechanics, Tsinghua University, Beijing 100084, China; b Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2010-08-27 Revised:2010-10-26 Online:2011-04-15 Published:2011-04-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 50730006, 50976053, and 50906042).

摘要: Using a transient thermoreflectance (TTR) technique, several Au films with different thicknesses on glass and SiC substrates are measured for thermal characterization of metallic nano-films, including the electron-phonon coupling factor G, interfacial thermal resistance R, and thermal conductivity Ks of the substrate. The rear heating-front detecting (RF) method is used to ensure the femtosecond temporal resolution. An intense laser beam is focused on the rear surface to heat the film, and another weak laser beam is focused on the very spot of the front surface to detect the change in the electron temperature. By varying the optical path delay between the two beams, a complete electron temperature profile can be scanned. Different from the normally used single-layer model, the double-layer model involving interfacial thermal resistance is studied here. The electron temperature cooling profile can be affected by the electron energy transfer into the substrate or the electron-phonon interactions in the metallic films. For multiple-target optimization, the genetic algorithm (GA) is used to obtain both G and R. The experimental result gives a deep understanding of the mechanism of ultra-fast heat transfer in metals.

关键词: transient thermoreflectance technique, electron--phonon coupling factor, interfacial thermal resistance, genetic algorithms

Abstract: Using a transient thermoreflectance (TTR) technique, several Au films with different thicknesses on glass and SiC substrates are measured for thermal characterization of metallic nano-films, including the electron-phonon coupling factor G, interfacial thermal resistance R, and thermal conductivity Ks of the substrate. The rear heating-front detecting (RF) method is used to ensure the femtosecond temporal resolution. An intense laser beam is focused on the rear surface to heat the film, and another weak laser beam is focused on the very spot of the front surface to detect the change in the electron temperature. By varying the optical path delay between the two beams, a complete electron temperature profile can be scanned. Different from the normally used single-layer model, the double-layer model involving interfacial thermal resistance is studied here. The electron temperature cooling profile can be affected by the electron energy transfer into the substrate or the electron-phonon interactions in the metallic films. For multiple-target optimization, the genetic algorithm (GA) is used to obtain both G and R. The experimental result gives a deep understanding of the mechanism of ultra-fast heat transfer in metals.

Key words: transient thermoreflectance technique, electron–phonon coupling factor, interfacial thermal resistance, genetic algorithms

中图分类号:  (Thermal instruments and apparatus)

  • 07.20.-n
42.60.By (Design of specific laser systems) 63.20.kd (Phonon-electron interactions)