中国物理B ›› 2010, Vol. 19 ›› Issue (3): 34202-034202.doi: 10.1088/1674-1056/19/3/034202

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Far-field superlens for nanolithography

陈健, 王庆康, 李海华   

  1. National Key Laboratory of Micro/Nano Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, , China
  • 收稿日期:2009-06-22 修回日期:2009-07-30 出版日期:2010-03-15 发布日期:2010-03-15
  • 基金资助:
    Project supported by the Shanghai Committee of Science and Technology of China (Grant No.~0852nm06600) and the National Natural Science Foundation of China(Grant No.~60808014).

Far-field superlens for nanolithography

Chen Jian(陈健), Wang Qing-Kang(王庆康),† and Li Hai-Hua(李海华)   

  1. National Key Laboratory of Micro/Nano Fabrication Technology, Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, China
  • Received:2009-06-22 Revised:2009-07-30 Online:2010-03-15 Published:2010-03-15
  • Supported by:
    Project supported by the Shanghai Committee of Science and Technology of China (Grant No.~0852nm06600) and the National Natural Science Foundation of China(Grant No.~60808014).

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摘要： A far-field optical lithography is developed in this paper. By designing the structure of a far-field optical superlens, lithographical resolution can be improved by using a conventional UV light source. The finite different time domain numerical studies indicate that the lithographic resolution at 50~nm line width is achievable with the structure shown in this paper by using 365~nm wavelength light, and the light can be transferred to a far distance in the photoresist.

Abstract: A far-field optical lithography is developed in this paper. By designing the structure of a far-field optical superlens, lithographical resolution can be improved by using a conventional UV light source. The finite different time domain numerical studies indicate that the lithographic resolution at 50~nm line width is achievable with the structure shown in this paper by using 365~nm wavelength light, and the light can be transferred to a far distance in the photoresist.

Key words: far-field, lithography, superlens, resolution

中图分类号:  (Lenses, prisms and mirrors)

  • 42.79.Bh
42.82.Bq (Design and performance testing of integrated-optical systems) 42.82.Cr (Fabrication techniques; lithography, pattern transfer) 85.85.+j (Micro- and nano-electromechanical systems (MEMS/NEMS) and devices)