Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

doi:10.1088/1674-1056/19/2/027202

中国物理B ›› 2010, Vol. 19 ›› Issue (2): 27202-027202.doi: 10.1088/1674-1056/19/2/027202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

龙雪, 李祥, 蔺彭婷, 程兴旺, 刘颖, 曹传宝

School for Materials Science & Engineering, Beijing Institute of Technology Beijing, Beijing 100081, China

收稿日期:2009-08-03 修回日期:2009-09-29 出版日期:2010-02-15 发布日期:2010-02-15

Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

Long Xue(龙雪), Li Xaing(李祥)^†, Lin Peng-Ting(蔺彭婷), Cheng Xing-Wang(程兴旺), Liu Ying(刘颖), and Cao Chuan-Bao(曹传宝)

School for Materials Science & Engineering, Beijing Institute of Technology Beijing, Beijing 100081, China

Received:2009-08-03 Revised:2009-09-29 Online:2010-02-15 Published:2010-02-15

摘要/Abstract

摘要： Sol--gol method was employed to synthesize Mg doped ZnO films on Si substrates. The annealing temperature-dependent structure and optical property of the produced samples were studied. An interesting result observed is that increasing Mg concentration in the studied samples induces the full width at half maximum (FWHM) of their near-band-edge (NBE) emission decrease and the defect related emission of the corresponding sample suppresses drastically. The possible mechanism of the observed result is discussed.

Abstract: Sol--gol method was employed to synthesize Mg doped ZnO films on Si substrates. The annealing temperature-dependent structure and optical property of the produced samples were studied. An interesting result observed is that increasing Mg concentration in the studied samples induces the full width at half maximum (FWHM) of their near-band-edge (NBE) emission decrease and the defect related emission of the corresponding sample suppresses drastically. The possible mechanism of the observed result is discussed.

Key words: doping, ZnO, photoluminescence

中图分类号: (Magnetomechanical effects, magnetostriction)

75.80.+q

77.65.Fs (Electromechanical resonance; quartz resonators) 72.80.Tm (Composite materials) 07.07.Df (Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)

龙雪, 李祥, 蔺彭婷, 程兴旺, 刘颖, 曹传宝. Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films[J]. 中国物理B, 2010, 19(2): 27202-027202.

Long Xue(龙雪), Li Xaing(李祥), Lin Peng-Ting(蔺彭婷), Cheng Xing-Wang(程兴旺), Liu Ying(刘颖), and Cao Chuan-Bao(曹传宝). Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films[J]. Chin. Phys. B, 2010, 19(2): 27202-027202.

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Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films

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