中国物理B ›› 2008, Vol. 17 ›› Issue (6): 2010-2017.doi: 10.1088/1674-1056/17/6/013

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Radiation-induced resistance oscillation and instability in GaAS/AlGaAS heterostructure under transverse magnetic fields

李国辉1, 杨癸2, 涂必红2, 赵宏伟2, 周世平2   

  1. (1)Department of Communication Engineering, Shanghai University, Shanghai 200072, China; (2)Department of Physics, Shanghai University, Shanghai 200444, China
  • 收稿日期:2007-03-19 修回日期:2007-10-15 出版日期:2008-06-20 发布日期:2008-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 60371033).

Radiation-induced resistance oscillation and instability in GaAS/AlGaAS heterostructure under transverse magnetic fields

Yang Gui(杨癸)a)†, Tu Bi-Hong(涂必红)a), Li Guo-Hui(李国辉)b) Zhao Hong-Wei(赵宏伟)a), and Zhou Shi-Ping(周世平)a)   

  1. a Department of Physics, Shanghai University, Shanghai 200444, China; b Department of Communication Engineering, Shanghai University, Shanghai 200072, China
  • Received:2007-03-19 Revised:2007-10-15 Online:2008-06-20 Published:2008-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 60371033).

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摘要： This paper studies dynamics of a modulation-doped GaAs/AlGaAs heterostructure under transverse magnetic fields and microwave radiations. It finds that negative differential conductivity, due to the real-space electron transfer and delayed dielectric relaxation of the interface potential barrier, can lead to complex behaviours when a relatively small magnetic field is applied. Quasiperiodicity, frequency-locking and the routes from period-doubling to chaos are found. Under a large magnetic field, however, two time-independent homogeneous steady states exist; and the longitudinal resistance of the system shows an interesting oscillation with period tuned by the ratio of microwave radiation frequency $\omega$ to the cyclotron frequency $\omega_{\rm c}$ and local minima at $\omega/\omega_{\rm c}={\rm integer}+1/4$.

关键词: heterostructure, chaos, bifurcation, resistance oscillation

Abstract: This paper studies dynamics of a modulation-doped GaAs/AlGaAs heterostructure under transverse magnetic fields and microwave radiations. It finds that negative differential conductivity, due to the real-space electron transfer and delayed dielectric relaxation of the interface potential barrier, can lead to complex behaviours when a relatively small magnetic field is applied. Quasiperiodicity, frequency-locking and the routes from period-doubling to chaos are found. Under a large magnetic field, however, two time-independent homogeneous steady states exist; and the longitudinal resistance of the system shows an interesting oscillation with period tuned by the ratio of microwave radiation frequency $\omega$ to the cyclotron frequency $\omega_{\rm c}$ and local minima at $\omega/\omega_{\rm c}={\rm integer}+1/4$.

Key words: heterostructure, chaos, bifurcation, resistance oscillation

中图分类号:  (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Kp
05.45.-a (Nonlinear dynamics and chaos) 72.20.Ht (High-field and nonlinear effects) 73.43.-f (Quantum Hall effects) 77.22.Gm (Dielectric loss and relaxation) 78.70.Gq (Microwave and radio-frequency interactions)