中国物理B ›› 2008, Vol. 17 ›› Issue (6): 2010-2017.doi: 10.1088/1674-1056/17/6/013
李国辉1, 杨癸2, 涂必红2, 赵宏伟2, 周世平2
Yang Gui(杨癸)a)†, Tu Bi-Hong(涂必红)a), Li Guo-Hui(李国辉)b) Zhao Hong-Wei(赵宏伟)a), and Zhou Shi-Ping(周世平)a)
摘要: This paper studies dynamics of a modulation-doped GaAs/AlGaAs heterostructure under transverse magnetic fields and microwave radiations. It finds that negative differential conductivity, due to the real-space electron transfer and delayed dielectric relaxation of the interface potential barrier, can lead to complex behaviours when a relatively small magnetic field is applied. Quasiperiodicity, frequency-locking and the routes from period-doubling to chaos are found. Under a large magnetic field, however, two time-independent homogeneous steady states exist; and the longitudinal resistance of the system shows an interesting oscillation with period tuned by the ratio of microwave radiation frequency $\omega$ to the cyclotron frequency $\omega_{\rm c}$ and local minima at $\omega/\omega_{\rm c}={\rm integer}+1/4$.
中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)