中国物理B ›› 2007, Vol. 16 ›› Issue (12): 3766-3771.doi: 10.1088/1009-1963/16/12/035

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Pressure effect on the electron mobility in AlAs/GaAs quantum wells

郝国栋, 班士良, 贾秀敏   

  1. Department of Physics, College of Sciences and Technology, Inner Mongolia University, Hohhot 010021, China
  • 出版日期:2007-12-20 发布日期:2007-12-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No~60566002) and the project for excellence subject-directors of Inner Mongolia Autonomous Region of China.

Pressure effect on the electron mobility in AlAs/GaAs quantum wells

Hao Guo-Dong(郝国栋), Ban Shi-Liang(班士良)†, and Jia Xiu-Min(贾秀敏)   

  1. Department of Physics, College of Sciences and Technology, Inner Mongolia University, Hohhot 010021, China
  • Online:2007-12-20 Published:2007-12-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No~60566002) and the project for excellence subject-directors of Inner Mongolia Autonomous Region of China.

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摘要： By taking the influence of optical phonon modes into account, this paper adopts the dielectric continuum phonon model and force balance equation to investigate the electronic mobility parallel to the interfaces for AlAs/GaAs semiconductor quantum wells (QWs) under hydrostatic pressure. The scattering from confined phonon modes, interface phonon modes and half-space phonon modes are analysed and the dominant scattering mechanisms in wide and narrow QWs are presented. The temperature dependence of the electronic mobility is also studied in the temperature range of optical phonon scattering being available. It is shown that the electronic mobility reduces obviously as pressure increases from 0 to 4GPa, the confined longitudinal optical (LO) phonon modes play an important role in wide QWs, whereas the interface optical phonon modes are dominant in narrow QWs, the half-space LO phonon modes hardly influence the electronic mobility expect for very narrow QWs.

Abstract: By taking the influence of optical phonon modes into account, this paper adopts the dielectric continuum phonon model and force balance equation to investigate the electronic mobility parallel to the interfaces for AlAs/GaAs semiconductor quantum wells (QWs) under hydrostatic pressure. The scattering from confined phonon modes, interface phonon modes and half-space phonon modes are analysed and the dominant scattering mechanisms in wide and narrow QWs are presented. The temperature dependence of the electronic mobility is also studied in the temperature range of optical phonon scattering being available. It is shown that the electronic mobility reduces obviously as pressure increases from 0 to 4GPa, the confined longitudinal optical (LO) phonon modes play an important role in wide QWs, whereas the interface optical phonon modes are dominant in narrow QWs, the half-space LO phonon modes hardly influence the electronic mobility expect for very narrow QWs.

Key words: electronic mobility, pressure effect, quantum well

中图分类号:  (High-pressure effects in solids and liquids)

  • 62.50.-p
63.22.-m (Phonons or vibrational states in low-dimensional structures and nanoscale materials) 71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor) 72.20.Fr (Low-field transport and mobility; piezoresistance) 73.20.At (Surface states, band structure, electron density of states) 73.63.Hs (Quantum wells)