中国物理B ›› 2006, Vol. 15 ›› Issue (5): 1071-1074.doi: 10.1088/1009-1963/15/5/034

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Fabrication and electrical properties of a carbon nanotube quantum dot

方靖海, 刘立伟, 孔文婕, 蔡建臻, 吕力   

  1. Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics,Chinese Academy of Sciences, Beijing 100080,China
  • 收稿日期:2005-10-27 修回日期:2006-02-28 出版日期:2006-05-20 发布日期:2006-05-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China, the Knowledge Innovation Program of the Chinese Academy of Sciences, and the National Center for Nanoscience and Technology of China (Grant No 10374108).

Fabrication and electrical properties of a carbon nanotube quantum dot

Fang Jing-Hai (方靖海), Liu Li-Wei (刘立伟), Kong Wen-Jie (孔文婕), Cai Jian-Zhen (蔡建臻), Lü Li (吕力)   

  1. Beijing National Laboratory for Condensed Matter Physics, and the Institute of Physics,Chinese Academy of Sciences, Beijing 100080,China
  • Received:2005-10-27 Revised:2006-02-28 Online:2006-05-20 Published:2006-05-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China, the Knowledge Innovation Program of the Chinese Academy of Sciences, and the National Center for Nanoscience and Technology of China (Grant No 10374108).

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摘要： Single-walled carbon nanotubes (SWNTs) were synthesized by pyrolyzing methane (CH4) at a temperature of 900℃ on SiO2 substrates pre-coated with iron nano-particles. Electrical contacts were fabricated onto one of the SWNTs by using an electron beam lithography process. Coulomb blockade and single-electron tunnelling characters were found at low temperatures, indicating that the SWNT in-between the electrodes forms a quantum dot. It is found that the Coulomb gap of the quantum dot is about 8.57 meV, and the factor \alpha , which converts the gate voltage to the true electrostatic potential shift, is around 200 for this device.

关键词: quantum dot, carbon nanotube

Abstract: Single-walled carbon nanotubes (SWNTs) were synthesized by pyrolyzing methane (CH4) at a temperature of 900℃ on SiO2 substrates pre-coated with iron nano-particles. Electrical contacts were fabricated onto one of the SWNTs by using an electron beam lithography process. Coulomb blockade and single-electron tunnelling characters were found at low temperatures, indicating that the SWNT in-between the electrodes forms a quantum dot. It is found that the Coulomb gap of the quantum dot is about 8.57 meV, and the factor $\alpha$, which converts the gate voltage to the true electrostatic potential shift, is around 200 for this device.

Key words: quantum dot, carbon nanotube

中图分类号:  (Nanotubes)

  • 81.07.De
73.63.Fg (Nanotubes) 73.63.Kv (Quantum dots) 81.16.Nd (Micro- and nanolithography)