中国物理B ›› 2005, Vol. 14 ›› Issue (7): 1423-1427.doi: 10.1088/1009-1963/14/7/027

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇    下一篇

Calculation of incident ion distribution in a rectangular hollow cathode in magnetic field

房同珍, 张龙, 王龙   

  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:2004-11-05 修回日期:2005-04-05 出版日期:2005-06-22 发布日期:2005-06-22

Calculation of incident ion distribution in a rectangular hollow cathode in magnetic field

Fang Tong-Zhen (房同珍), Zhang Long (张龙), Wang Long (王龙)   

  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:2004-11-05 Revised:2005-04-05 Online:2005-06-22 Published:2005-06-22

PDF (PC)

567

赞

摘要： Incident ion distribution inside a rectangular hollow cathode in a uniform magnetic field is studied analytically. The analysis shows that the ion distribution on one sidewall is not interfered by the other sidewall when the depth and width of the cathode are equal, and the ion distribution on the bottom surface related to the depth of the cathode and the number of ions on the bottom surface decrease monotonically from the centre to the sidewall.

Abstract: Incident ion distribution inside a rectangular hollow cathode in a uniform magnetic field is studied analytically. The analysis shows that the ion distribution on one sidewall is not interfered by the other sidewall when the depth and width of the cathode are equal, and the ion distribution on the bottom surface related to the depth of the cathode and the number of ions on the bottom surface decrease monotonically from the centre to the sidewall.

Key words: hollow cathode discharge, incident ion distribution, magnetic field

中图分类号:  (General laser theory)

  • 42.55.Ah
42.55.Sa (Microcavity and microdisk lasers) 71.35.Cc (Intrinsic properties of excitons; optical absorption spectra) 81.15.Cd (Deposition by sputtering) 68.55.-a (Thin film structure and morphology) 78.45.+h (Stimulated emission)