中国物理B ›› 2005, Vol. 14 ›› Issue (6): 1223-1226.doi: 10.1088/1009-1963/14/6/028

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Electrical resistivity of a novel oxadiazole derivative as a function of pressure and temperature using a diamond anvil cell

唐本臣1, 李敏1, 骆继锋2, 韩永昊2, 高春晓2, 邹广田2   

  1. (1)Key Laboratory for Automobile Materials, Ministry of Education, Department of Materials Science, Jilin University, Changchun 130012, China; (2)State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
  • 收稿日期:2004-11-18 修回日期:2005-01-07 出版日期:2005-05-27 发布日期:2005-05-27
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10104008, 29974013, 50373016) and the International Science and Technology Cooperation Project of China (Grant No. 2001CB711201) and the Excellent Young Teachers Program of

Electrical resistivity of a novel oxadiazole derivative as a function of pressure and temperature using a diamond anvil cell

Luo Ji-Feng (骆继锋)a, Han Yong-Hao (韩永昊)aTang Ben-Chen (唐本臣)aGao Chun-Xiao (高春晓)aLi Min (李敏)bZou Guang-Tian (邹广田)a   

  1. a Key Laboratory for Automobile Materials, Ministry of Education, Department of Materials Science, Jilin University, Changchun 130012, China; b State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
  • Received:2004-11-18 Revised:2005-01-07 Online:2005-05-27 Published:2005-05-27
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10104008, 29974013, 50373016) and the International Science and Technology Cooperation Project of China (Grant No. 2001CB711201) and the Excellent Young Teachers Program of

摘要: The in-situ electrical resistance measurement on the microcrystal of 1,4-bis[(4-methyloxyphenyl)-1,3,4-oxadiazolyl]- 2,5-bisheptyloxyphenylene (OXD-2) has been carried out under conditions of high pressure and temperatures higher than room temperature by using the diamond anvil cell (DAC). Sample’s resistivity was calculated with a finite element analysis method. The temperature and pressure dependencies of the resistivity of OXD-2 microcrystal were measured up to 150 oC and 16 GPa. The resistivity of OXD-2 decreases with increasing temperature, indicating that OXD-2 exhibits organic-semiconductor conducting property in the region of experimental pressure. Between 90-100 ℃, the resistivity drops with the temperature, which reveals a temperature-induced phase transition. As the pressure increases, the resistivity of OXD-2 increases and reaches a maxium at about 6 GPa, and then begins to decrease at higher pressures. Combining the in-situ x-ray diffraction data with the resistivity measurement results under pressure, the anomaly resistivity drop after 6 GPa is confirmed to be from the pressure-induced amorphous phase transition of OXD-2.

关键词: resistivity measurement, high pressure, oxadiazole

Abstract: The in-situ electrical resistance measurement on the microcrystal of 1,4-bis[(4-methyloxyphenyl)-1,3,4-oxadiazolyl]- 2,5-bisheptyloxyphenylene (OXD-2) has been carried out under conditions of high pressure and temperatures higher than room temperature by using the diamond anvil cell (DAC). Sample’s resistivity was calculated with a finite element analysis method. The temperature and pressure dependencies of the resistivity of OXD-2 microcrystal were measured up to 150 oC and 16 GPa. The resistivity of OXD-2 decreases with increasing temperature, indicating that OXD-2 exhibits organic-semiconductor conducting property in the region of experimental pressure. Between 90-100 ℃, the resistivity drops with the temperature, which reveals a temperature-induced phase transition. As the pressure increases, the resistivity of OXD-2 increases and reaches a maxium at about 6 GPa, and then begins to decrease at higher pressures. Combining the in-situ x-ray diffraction data with the resistivity measurement results under pressure, the anomaly resistivity drop after 6 GPa is confirmed to be from the pressure-induced amorphous phase transition of OXD-2.

Key words: resistivity measurement, high pressure, oxadiazole

中图分类号:  (Polymers; organic compounds (including organic semiconductors))

  • 72.80.Le
62.50.-p (High-pressure effects in solids and liquids)