中国物理B ›› 2005, Vol. 14 ›› Issue (5): 949-952.doi: 10.1088/1009-1963/14/5/015
刘国治, 黄文华, 杨占峰
Liu Guo-Zhi (刘国治), Huang Wen-Hua (黄文华), Yang Zhan-Feng (杨占峰)
摘要: Some physical characteristics of foiless diodes are obtained and analyzed by numerical simulations. Relations between diode current and configuration parameters, diode voltage and external magnetic field are investigated. Employing these relations and assuming that the external magnetic field is intense enough, the diode current can be approximately written as $I_b=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/\delta r))(r2/3-1)3/2$, in which $L_{\rm d}$ is the A-K gap, the outer radius of cathode, and the radius of drifting tube;x=ln(Rp/Rc),δr =Rp-Rc , . This expression is comparatively accurate for with different configuration parameters and voltages, results obtained from this expression are consistent with that of numerical simulations within an error of 10%.
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