中国物理B ›› 2005, Vol. 14 ›› Issue (5): 949-952.doi: 10.1088/1009-1963/14/5/015

• • 上一篇    下一篇

I-V characteristics of foilless diodes　　　

刘国治, 黄文华, 杨占峰   

  1. Northwest Institute of Nuclear Technology, Xi’an, China, P. O. 69-13, 710024
  • 收稿日期:2004-08-06 修回日期:2004-12-30 出版日期:2005-05-19 发布日期:2005-05-19
  • 基金资助:
    Project supported by the National High Technology Development Program of China (Grant No 2004AA834060)

I-V characteristics of foilless diodes

Liu Guo-Zhi (刘国治), Huang Wen-Hua (黄文华), Yang Zhan-Feng (杨占峰)   

  1. Northwest Institute of Nuclear Technology, Xi’an, China, P. O. 69-13, 710024
  • Received:2004-08-06 Revised:2004-12-30 Online:2005-05-19 Published:2005-05-19
  • Supported by:
    Project supported by the National High Technology Development Program of China (Grant No 2004AA834060)

PDF (PC)

426

赞

摘要： Some physical characteristics of foiless diodes are obtained and analyzed by numerical simulations. Relations between diode current and configuration parameters, diode voltage and external magnetic field are investigated. Employing these relations and assuming that the external magnetic field is intense enough, the diode current can be approximately written as $I_b=(7.5/x)(x+(0.81-x)/(1+0.7Ld2/\delta r))(r2/3-1)3/2$, in which $L_{\rm d}$  is the A-K gap, the outer radius of cathode, and the radius of drifting tube;x=ln(Rp/Rc)，δr =Rp-Rc , . This expression is comparatively accurate for with different configuration parameters and voltages, results obtained from this expression are consistent with that of numerical simulations within an error of 10%.

关键词: foilless diode, I-V relation, intense electron beam

Abstract: Some physical characteristics of foiless diodes are obtained and analyzed by numerical simulations. Relations between diode current and configuration parameters, diode voltage and external magnetic field are investigated. Employing these relations and assuming that the external magnetic field is intense enough, the diode current can be approximately written as $I_{\rm b}=(7.5/x)(x+(0.81-x)/(1+0.7L_{\rm d}^2/\delta r))(\gamma_0^{2/3}-1)^{3/2}$, in which $L_{\rm d}$  is the Anode-Cathode (AK) gap, $R_{\rm c}$ the outer radius of cathode, and $R_{\rm p}$ the radius of drifting tube; $x=\ln(R_{\rm p}/R_{\rm c}$)，$\delta r =R_{\rm p}-R_{\rm c}$ . This expression is comparatively accurate for with different configuration parameters and voltages, results obtained from this expression are consistent with that of numerical simulations within an error of 10%.

Key words: foilless diode, I-V relation, intense electron beam

中图分类号: 

  • 2925B