Investigation of the growth process of Si nanowires using the vapour－liquid－solid mechanism

doi:10.1088/1009-1963/11/10/315

中国物理B ›› 2002, Vol. 11 ›› Issue (10): 1047-1050.doi: 10.1088/1009-1963/11/10/315

Investigation of the growth process of Si nanowires using the vapour－liquid－solid mechanism

邢英杰¹, 奚中和¹, 薛增泉¹, 俞大鹏²

(1)Department of Electronics, Peking University, Beijing 100871, China; (2)School of Physics, Peking University, Beijing 100871, China

收稿日期:2002-01-23 修回日期:2002-06-19 出版日期:2002-10-12 发布日期:2005-06-12
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos 60071015 and 50025206) and by the Ministry of Science and Technology of China (Grant No 2001CB610503).

Investigation of the growth process of Si nanowires using the vapour－liquid－solid mechanism

Xing Ying-Jie (邢英杰)^a, Yu Da-Peng (俞大鹏)^b, Xi Zhong-He (奚中和)^a, Xue Zeng-Quan (薛增泉)^a

^a Department of Electronics, Peking University, Beijing 100871, China; ^b School of Physics, Peking University, Beijing 100871, China

Received:2002-01-23 Revised:2002-06-19 Online:2002-10-12 Published:2005-06-12
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos 60071015 and 50025206) and by the Ministry of Science and Technology of China (Grant No 2001CB610503).

摘要/Abstract

摘要： Silicon nanowires have been grown by the thermal decomposition of silane via the vapour－liquid－solid (VLS) mechanism. Three different stages of VLS growth (eutectic alloy formation, crystal nucleation and unidirectional growth) were studied separately using a scanning electron microscope and a high-resolution transmission electron microscope. Very short silicon nanowires prepared under particular conditions provide direct evidence of the VLS mechanism on a nanometre scale. Our results will be very helpful for the controllable synthesis of Si nanowires.

Abstract: Silicon nanowires have been grown by the thermal decomposition of silane via the vapour－liquid－solid (VLS) mechanism. Three different stages of VLS growth (eutectic alloy formation, crystal nucleation and unidirectional growth) were studied separately using a scanning electron microscope and a high-resolution transmission electron microscope. Very short silicon nanowires prepared under particular conditions provide direct evidence of the VLS mechanism on a nanometre scale. Our results will be very helpful for the controllable synthesis of Si nanowires.

Key words: nanowires, vapour－liquid－solid mechanism

中图分类号: (Chemical synthesis methods)

81.16.Be

82.30.Lp (Decomposition reactions (pyrolysis, dissociation, and fragmentation))

邢英杰, 俞大鹏, 奚中和, 薛增泉. Investigation of the growth process of Si nanowires using the vapour－liquid－solid mechanism[J]. 中国物理B, 2002, 11(10): 1047-1050.

Xing Ying-Jie (邢英杰), Yu Da-Peng (俞大鹏), Xi Zhong-He (奚中和), Xue Zeng-Quan (薛增泉). Investigation of the growth process of Si nanowires using the vapour－liquid－solid mechanism[J]. Chinese Physics, 2002, 11(10): 1047-1050.

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Investigation of the growth process of Si nanowires using the vapour－liquid－solid mechanism

Investigation of the growth process of Si nanowires using the vapour－liquid－solid mechanism

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