中国物理B ›› 1997, Vol. 6 ›› Issue (6): 413-421.doi: 10.1088/1004-423X/6/6/003

• CLASSICAL AREAS OF PHENOMENOLOGY • 上一篇    下一篇

THEORY OF PHOTOREFRACTIVE EFFECT FOR DOUBLE CARRIERS WITH TWO DEEP TRAPS AND A SHALLOW HOLE TRAP

李艳秋, 刘树田, 孙万均, 许克彬, 洪晶   

  1. Department of Applied Physics, Harbin Institute of Technology, Harbin 150001, China
  • 收稿日期:1996-06-24 修回日期:1997-01-06 出版日期:1997-06-20 发布日期:1997-06-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China and the Doctoral Foundation of the National Education Commission of China.

THEORY OF PHOTOREFRACTIVE EFFECT FOR DOUBLE CARRIERS WITH TWO DEEP TRAPS AND A SHALLOW HOLE TRAP

LI YAN-QIU (李艳秋), LIU SHU-TIAN (刘树田), SUN WAN-JUN (孙万均), XU KE-BIN (许克彬), HONG JING (洪晶)   

  1. Department of Applied Physics, Harbin Institute of Technology, Harbin 150001, China
  • Received:1996-06-24 Revised:1997-01-06 Online:1997-06-20 Published:1997-06-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China and the Doctoral Foundation of the National Education Commission of China.

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摘要： We propose a new theoretical model of photorefractivity which consists of both electron and hole carriers with two deep traps and a shallow hole trap. The model predicts that,if the shallow trap accumulates a large density of charge carriers,the photoconductivity will be a sublinear (or superlinear) function of light intensity,and the space charge field will increase (or decrease) to a saturated value as the light intensity increases,depending on the sign of the dominant carrier. The comparison of this model with previous ones shows that it provides a more common description about the dependences of photoconductivi ty and space charge field on the light intensity.

Abstract: We propose a new theoretical model of photorefractivity which consists of both electron and hole carriers with two deep traps and a shallow hole trap. The model predicts that,if the shallow trap accumulates a large density of charge carriers,the photoconductivity will be a sublinear (or superlinear) function of light intensity,and the space charge field will increase (or decrease) to a saturated value as the light intensity increases,depending on the sign of the dominant carrier. The comparison of this model with previous ones shows that it provides a more common description about the dependences of photoconductivi ty and space charge field on the light intensity.

中图分类号:  (Phase conjugation; photorefractive and Kerr effects)

  • 42.65.Hw
42.70.Nq (Other nonlinear optical materials; photorefractive and semiconductor materials) 72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 72.40.+w (Photoconduction and photovoltaic effects)