中国物理B ›› 1996, Vol. 5 ›› Issue (9): 700-704.doi: 10.1088/1004-423X/5/9/008

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

SUPPRESSION OF BALLISTIC ELECTRON TRANSMISSION THROUGH A SEMICONDUCTOR Π-STRUCTURE BY AN EXTERNAL TRANSVERSE ELECTRIC FIELD

盛卫东, 夏建白   

  1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China
  • 收稿日期:1995-06-26 出版日期:1996-09-20 发布日期:1996-09-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

SUPPRESSION OF BALLISTIC ELECTRON TRANSMISSION THROUGH A SEMICONDUCTOR Π-STRUCTURE BY AN EXTERNAL TRANSVERSE ELECTRIC FIELD

SHENG WEI-DONG (盛卫东), XIA JIAN-BAI (夏建白)   

  1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China
  • Received:1995-06-26 Online:1996-09-20 Published:1996-09-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： We have conducted numerical studies of ballistic electron transport in a semicon-ductor II-structure when an external transverse electric field is applied. The device conductance as a function of electron energy and the strength of the transverse electric field is calculated on the basis of tight-binding Green's function formalism. The calculations show that a relatively weak electric field can induce very large decrease in the electron transmission across the structure. When the transverse electric field is sufficiently strong, electrons can hardly be transported through the device. Thus the performance of the device can be greatly improved for it is much easier to control electron transport through the device with an external transverse electric field.

Abstract: We have conducted numerical studies of ballistic electron transport in a semicon-ductor II-structure when an external transverse electric field is applied. The device conductance as a function of electron energy and the strength of the transverse electric field is calculated on the basis of tight-binding Green's function formalism. The calculations show that a relatively weak electric field can induce very large decrease in the electron transmission across the structure. When the transverse electric field is sufficiently strong, electrons can hardly be transported through the device. Thus the performance of the device can be greatly improved for it is much easier to control electron transport through the device with an external transverse electric field.

中图分类号:  (Ballistic transport)

  • 73.23.Ad
72.20.Fr (Low-field transport and mobility; piezoresistance)