An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer
李鹏程, 罗小蓉, 罗尹春, 周坤, 石先龙, 张彦辉, 吕孟山
An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer
Li Peng-Cheng (李鹏程), Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Zhou Kun (周坤), Shi Xian-Long (石先龙), Zhang Yan-Hui (张彦辉), Lv Meng-Shan (吕孟山)
Chin. Phys. B
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2015, (4): 47304
-047304
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DOI: 10.1088/1674-1056/24/4/047304