中国物理B ›› 2020, Vol. 29 ›› Issue (1): 18501-018501.doi: 10.1088/1674-1056/ab5932

所属专题： Virtual Special Topic — Magnetism and Magnetic Materials

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇    下一篇

Visualization of tunnel magnetoresistance effect in single manganite nanowires

Yang Yu(郁扬), Wenjie Hu(胡雯婕), Qiang Li(李强), Qian Shi(时倩), Yinyan Zhu(朱银燕), Hanxuan Lin(林汉轩), Tian Miao(苗田), Yu Bai(白羽), Yanmei Wang(王艳梅), Wenting Yang(杨文婷), Wenbin Wang(王文彬), Hangwen Guo(郭杭闻), Lifeng Yin(殷立峰), Jian Shen(沈健)   

  1. 1 State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;
    2 Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China;
    3 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • 收稿日期:2019-11-16 出版日期:2020-01-05 发布日期:2020-01-05
  • 通讯作者: Hangwen Guo, Lifeng Yin, Jian Shen E-mail:hangwenguo@fudan.edu.cn;lifengyin@fudan.edu.cn;shenj5494@fudan.edu.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0300702), Shanghai Municipal Natural Science Foundation, China (Grant Nos. 19ZR1402800, 18JC1411400, 18ZR1403200, and 17ZR1442600), the Program of Shanghai Academic Research Leader, China (Grant Nos. 18XD1400600 and 17XD1400400), and the China Postdoctoral Science Foundation (Grant Nos. 2016M601488 and 2017T100265).

Visualization of tunnel magnetoresistance effect in single manganite nanowires

Yang Yu(郁扬)1, Wenjie Hu(胡雯婕)1, Qiang Li(李强)1, Qian Shi(时倩)1, Yinyan Zhu(朱银燕)1, Hanxuan Lin(林汉轩)1, Tian Miao(苗田)1, Yu Bai(白羽)1, Yanmei Wang(王艳梅)1, Wenting Yang(杨文婷)1, Wenbin Wang(王文彬)2, Hangwen Guo(郭杭闻)2, Lifeng Yin(殷立峰)1,2,3, Jian Shen(沈健)1,2,3   

  1. 1 State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;
    2 Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China;
    3 Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • Received:2019-11-16 Online:2020-01-05 Published:2020-01-05
  • Contact: Hangwen Guo, Lifeng Yin, Jian Shen E-mail:hangwenguo@fudan.edu.cn;lifengyin@fudan.edu.cn;shenj5494@fudan.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0300702), Shanghai Municipal Natural Science Foundation, China (Grant Nos. 19ZR1402800, 18JC1411400, 18ZR1403200, and 17ZR1442600), the Program of Shanghai Academic Research Leader, China (Grant Nos. 18XD1400600 and 17XD1400400), and the China Postdoctoral Science Foundation (Grant Nos. 2016M601488 and 2017T100265).

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摘要： We reported a study of tunnel magnetoresistance (TMR) effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging. TMR value up to 290% has been observed in single (La1-yPry)1-xCaxMnO3 nanowires with varying width. We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions. Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.

关键词: manganite nanowires, tunnel magnetoresistance, magnetic force microscope

Abstract: We reported a study of tunnel magnetoresistance (TMR) effect in single manganite nanowire via the combination of magnetotransport and magnetic force microscopy imaging. TMR value up to 290% has been observed in single (La1-yPry)1-xCaxMnO3 nanowires with varying width. We find that the TMR effect can be explained in the scenario of opening and blockade of conducting channels from inherent magnetic domain evolutions. Our findings provide a new route to fabricate TMR junctions and point towards future improvements in complex oxide-based TMR spintronics.

Key words: manganite nanowires, tunnel magnetoresistance, magnetic force microscope

中图分类号:  (Junction breakdown and tunneling devices (including resonance tunneling devices))

  • 85.30.Mn
07.79.Pk (Magnetic force microscopes) 71.27.+a (Strongly correlated electron systems; heavy fermions)