中国物理B ›› 2010, Vol. 19 ›› Issue (12): 127701-127701.doi: 10.1088/1674-1056/19/12/127701

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Epitaxy surface effect on the first-order phase transition properties in a ferroelectric thin film

张怀武1, 卢兆信2, 滕保华2, 杨新2, 戎永辉2   

  1. (1)School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; (2)School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2010-06-08 修回日期:2010-07-16 出版日期:2010-12-15 发布日期:2010-12-15
  • 基金资助:
    Project supported partly by the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (Grant No. 60721001).

Epitaxy surface effect on the first-order phase transition properties in a ferroelectric thin film

Lu Zhao-Xin(卢兆信)a), Teng Bao-Hua(滕保华)a), Yang Xin(杨新)a), Rong Yong-Hui(戎永辉) a), and Zhang Huai-Wu(张怀武)b)   

  1. a School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; b School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2010-06-08 Revised:2010-07-16 Online:2010-12-15 Published:2010-12-15
  • Supported by:
    Project supported partly by the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (Grant No. 60721001).

摘要: By modifying the interchange interactions and the transverse fields on the epitaxy surface layer, this paper studies the phase transition properties of an n-layer ferroelectric thin film by the Fermi-type Green's function technique based on the transverse Ising model with a four-spin interaction. The special attention is given to the effect of the epitaxy surface layer on the first-order phase transition properties in the parameter space constructed by the ratios of the bulk transverse field and the bulk four-spin interaction to the bulk two-spin interaction with the framework of the higher-order decoupling approximation to the Fermi-type Green's function. The results show that the first-order phase transition properties will be changed significantly due to the modification of interchange interaction and transverse field parameters on the epitaxy surface layer. The dependence of the first-order phase transition properties on the thickness of ferroelectric thin films is also discussed.

Abstract: By modifying the interchange interactions and the transverse fields on the epitaxy surface layer, this paper studies the phase transition properties of an n-layer ferroelectric thin film by the Fermi-type Green's function technique based on the transverse Ising model with a four-spin interaction. The special attention is given to the effect of the epitaxy surface layer on the first-order phase transition properties in the parameter space constructed by the ratios of the bulk transverse field and the bulk four-spin interaction to the bulk two-spin interaction with the framework of the higher-order decoupling approximation to the Fermi-type Green's function. The results show that the first-order phase transition properties will be changed significantly due to the modification of interchange interaction and transverse field parameters on the epitaxy surface layer. The dependence of the first-order phase transition properties on the thickness of ferroelectric thin films is also discussed.

Key words: ferroelectric thin film, phase diagram

中图分类号:  (Classical spin models)

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