中国物理B ›› 2017, Vol. 26 ›› Issue (9): 97802-097802.doi: 10.1088/1674-1056/26/9/097802

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Optical response of tunable terahertz plasmon in a grating-gated graphene transistor

Bo Yan(闫博), Jingyue Fang(方靖岳), Shiqiao Qin(秦石乔), Yongtao Liu(刘永涛), Li Chen(陈力), Shuang Chen(陈爽), Renbing Li(李仁兵), Zhen Han(韩震)   

  1. 1 China Aerodynamics Research and Development Center, Mianyang 621000, China;
    2 College of Science, National University of Defense Technology, Changsha 410073, China;
    3 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 收稿日期:2017-04-17 修回日期:2017-06-10 出版日期:2017-09-05 发布日期:2017-09-05
  • 通讯作者: Jingyue Fang E-mail:fjynudt@aliyun.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11272337), the Research Project of National University of Defense Technology, China (Grant No. ZK16-03-34), the Natural Science Foundation of Hunan Province, China (Grant No. 2016JJ3021), and the Open Project of Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences (Grant No. 15ZS03).

Optical response of tunable terahertz plasmon in a grating-gated graphene transistor

Bo Yan(闫博)1,2,3, Jingyue Fang(方靖岳)2, Shiqiao Qin(秦石乔)2, Yongtao Liu(刘永涛)3, Li Chen(陈力)1, Shuang Chen(陈爽)1, Renbing Li(李仁兵)1, Zhen Han(韩震)1   

  1. 1 China Aerodynamics Research and Development Center, Mianyang 621000, China;
    2 College of Science, National University of Defense Technology, Changsha 410073, China;
    3 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • Received:2017-04-17 Revised:2017-06-10 Online:2017-09-05 Published:2017-09-05
  • Contact: Jingyue Fang E-mail:fjynudt@aliyun.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11272337), the Research Project of National University of Defense Technology, China (Grant No. ZK16-03-34), the Natural Science Foundation of Hunan Province, China (Grant No. 2016JJ3021), and the Open Project of Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences (Grant No. 15ZS03).

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摘要： Tunable terahertz plasmon in a graphene-based device with a grating serving as a top gate is studied. Transmission spectra exhibit a distinct peak in the terahertz region when the terahertz electric field is perpendicular to the grating fingers. Our results show that the extinction in the transmission of single-layer graphene shields beyond 80%. Electronic results further show that the graphene plasmon can be weakly adjusted by tuning the gate voltage. Theoretical calculation also implies that the plasmon frequency of graphene can fall into the terahertz region of 1-2 THz by improving the sustaining ability and capacitance of the top gate.

关键词: graphene plasmon, Lorentz, terahertz time-domain spectroscopy, electrical measurement

Abstract: Tunable terahertz plasmon in a graphene-based device with a grating serving as a top gate is studied. Transmission spectra exhibit a distinct peak in the terahertz region when the terahertz electric field is perpendicular to the grating fingers. Our results show that the extinction in the transmission of single-layer graphene shields beyond 80%. Electronic results further show that the graphene plasmon can be weakly adjusted by tuning the gate voltage. Theoretical calculation also implies that the plasmon frequency of graphene can fall into the terahertz region of 1-2 THz by improving the sustaining ability and capacitance of the top gate.

Key words: graphene plasmon, Lorentz, terahertz time-domain spectroscopy, electrical measurement

中图分类号:  (Optical properties of graphene)

  • 78.67.Wj
87.50.U (Millimeter/terahertz fields effects) 72.80.Vp (Electronic transport in graphene) 52.40.-w (Plasma interactions (nonlaser))