Perpendicular magnetic tunnel junction and its application in magnetic random access memory

doi:10.1088/1674-1056/23/7/077501

中国物理B ›› 2014, Vol. 23 ›› Issue (7): 77501-077501.doi: 10.1088/1674-1056/23/7/077501

所属专题： TOPICAL REVIEW — Magnetism, magnetic materials, and interdisciplinary research

• SPECIAL TOPIC --- Non-equilibrium phenomena in soft matters • 上一篇下一篇

Perpendicular magnetic tunnel junction and its application in magnetic random access memory

刘厚方, Syed Shahbaz Ali, 韩秀峰

Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2014-04-23 修回日期:2014-06-13 出版日期:2014-07-15 发布日期:2014-07-15
基金资助:
Project supported by the State Key Project of Fundamental Research of Ministry of Science and Technology, China (Grant No. 2010CB934400) and the National Natural Science Foundation of China (Grant Nos. 51229101 and 11374351).

Perpendicular magnetic tunnel junction and its application in magnetic random access memory

Liu Hou-Fang (刘厚方), Syed Shahbaz Ali, Han Xiu-Feng (韩秀峰)

Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2014-04-23 Revised:2014-06-13 Online:2014-07-15 Published:2014-07-15
Contact: Han Xiu-Feng E-mail:xfhan@iphy.ac.cn
About author:75.30.Gw; 75.50.Ss; 75.76.+j; 85.75.Dd
Supported by:
Project supported by the State Key Project of Fundamental Research of Ministry of Science and Technology, China (Grant No. 2010CB934400) and the National Natural Science Foundation of China (Grant Nos. 51229101 and 11374351).

摘要/Abstract

摘要： Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L1₀-ordered (Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.

关键词: magnetic random access memory, perpendicular magnetic anisotropy, spin transfer torque effect, magnetic tunnel junction

Abstract: Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE-TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn-Ga, L1₀-ordered (Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au]N, and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.

Key words: magnetic random access memory, perpendicular magnetic anisotropy, spin transfer torque effect, magnetic tunnel junction

中图分类号: (Magnetic anisotropy)

75.30.Gw

75.50.Ss (Magnetic recording materials) 75.76.+j (Spin transport effects) 85.75.Dd (Magnetic memory using magnetic tunnel junctions)

刘厚方, Syed Shahbaz Ali, 韩秀峰. Perpendicular magnetic tunnel junction and its application in magnetic random access memory[J]. 中国物理B, 2014, 23(7): 77501-077501.

Liu Hou-Fang (刘厚方), Syed Shahbaz Ali, Han Xiu-Feng (韩秀峰). Perpendicular magnetic tunnel junction and its application in magnetic random access memory[J]. Chin. Phys. B, 2014, 23(7): 77501-077501.

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Perpendicular magnetic tunnel junction and its application in magnetic random access memory

Perpendicular magnetic tunnel junction and its application in magnetic random access memory

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