Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits

doi:10.1088/1674-1056/23/3/038402

中国物理B ›› 2014, Vol. 23 ›› Issue (3): 38402-038402.doi: 10.1088/1674-1056/23/3/038402

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits

钱利波^a, 朱樟明^b, 夏银水^a, 丁瑞雪^b, 杨银堂^b

a School of Information Science and Engineering, Ningbo University, Ningbo 315211, China;
b School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, China

收稿日期:2013-09-03 修回日期:2013-11-26 出版日期:2014-03-15 发布日期:2014-03-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61131001, 61322405, 61204044, 61376039, and 61334003).

Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits

Qian Li-Bo (钱利波)^a, Zhu Zhang-Ming (朱樟明)^b, Xia Yin-Shui (夏银水)^a, Ding Rui-Xue (丁瑞雪)^b, Yang Yin-Tang (杨银堂)^b

a School of Information Science and Engineering, Ningbo University, Ningbo 315211, China;
b School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, China

Received:2013-09-03 Revised:2013-11-26 Online:2014-03-15 Published:2014-03-15
Contact: Qian Li-Bo E-mail:qianlibo@nbu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61131001, 61322405, 61204044, 61376039, and 61334003).

摘要/Abstract

摘要： Through-silicon-via (TSV) to TSV crosstalk noise is one of the key factors affecting the signal integrity of three-dimensional integrated circuits (3D ICs). Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 mV and 379 mV reductions in the peak noise voltage, respectively.

关键词: three-dimensional integrated circuits, through-silicon-via crosstalk, driver sizing, via shielding

Abstract: Through-silicon-via (TSV) to TSV crosstalk noise is one of the key factors affecting the signal integrity of three-dimensional integrated circuits (3D ICs). Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 mV and 379 mV reductions in the peak noise voltage, respectively.

Key words: three-dimensional integrated circuits, through-silicon-via crosstalk, driver sizing, via shielding

中图分类号: (Electronic circuits)

84.30.-r

84.30.Bv (Circuit theory)

钱利波, 朱樟明, 夏银水, 丁瑞雪, 杨银堂. Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits[J]. 中国物理B, 2014, 23(3): 38402-038402.

Qian Li-Bo (钱利波), Zhu Zhang-Ming (朱樟明), Xia Yin-Shui (夏银水), Ding Rui-Xue (丁瑞雪), Yang Yin-Tang (杨银堂). Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits[J]. Chin. Phys. B, 2014, 23(3): 38402-038402.

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Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits

Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits

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