Robust two-qubit gates in silicon double quantum dots with composite pulses and optimized exchange control

Robust two-qubit gates are essential for scalable silicon spin qubits, but their fidelities are limited by microwave-control imperfections and charge-noise-induced exchange fluctuations. We propose a practical scheme for robust controlled-Z (CZ) and controlled-NOT (CNOT) gates in a silicon double quantum dot. By applying a transverse microwave drive, the effective Hamiltonian can be decomposed into two driven subspaces. In the subspace mainly controlled by the microwave field, a Broadband 1 (BB1) composite pulse is used to suppress errors in the microwave amplitude. In the exchange-assisted subspace, the microwave phases and durations are kept fixed, while a few piecewise-constant exchange amplitudes are optimized by a GRAPE-like procedure. This design reduces the sensitivity to both microwave-amplitude and exchange-amplitude errors while keeping the control waveform simple and experimentally friendly. Numerical simulations show that the optimized CNOT gate reaches a fidelity above 99.99% under experimentally relevant noise strengths, and the CZ gate also maintains a fidelity above 99.9%. These results indicate that combining composite pulses with optimized exchange control provides an experimentally feasible route to robust two-qubit gates in silicon spin qubits.