Review of three-dimensional graphene photodetectors: advances in mechanisms, architectures, and applications

As a three-dimensional (3D) extension of two-dimensional (2D) graphene, it retains impressive properties such as high carrier mobility, electrical conductivity, and interfacial compatibility. Its unique porous network enhances optical field distribution and carrier dynamics, offering a higher specific surface area and greater active edge density than traditional semiconductor materials. This makes it an excellent candidate for advanced photodetection. Features such as nano-resonant cavities enhance light-absorption efficiency through photon confinement and scattering. Its zero-bandgap semimetallic nature enables devices to achieve a wide spectral response from the ultraviolet to the terahertz range. With a work function of 4.5 eV to 4.8 eV, 3D-graphene forms high-quality Schottky heterojunctions with semiconductors including silicon (Si), germanium (Ge), gallium arsenide (GaAs), and indium phosphide (InP), enhancing photogenerated charge carrier separation. Thus, 3D-graphene photodetectors show great potential for broadband response, high sensitivity, and compatibility with complementary metal-oxide-semiconductor (CMOS) technology. This review summarizes recent advances in 3D-graphene photodetectors, focusing on structural design and performance relationships while exploring applications in optoelectronic logic, polarization imaging, and information encryption.