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  • Cite this article:

    Z Y Pang, K Liao, S J Zhang, Rao Fei, Cui Zhang, Richeng Yu, Gang Wang, Sheng Meng, Jimin Zhao. Evidence of structural transition and spin-lattice coupling in antiferromagnetic MnSi2Te4J. Chin. Phys. B, 2026, 35(8): 087401.
    Z Y Pang, K Liao, S J Zhang, Rao Fei, Cui Zhang, Richeng Yu, Gang Wang, Sheng Meng, Jimin Zhao. Evidence of structural transition and spin-lattice coupling in antiferromagnetic MnSi2Te4J. Chin. Phys. B, 2026, 35(8): 087401.
  • Evidence of structural transition and spin-lattice coupling in antiferromagnetic MnSi2Te4

    • Layered van der Waals magnetic chalcogenides provide an important platform for exploring the interplay between lattice dynamics and magnetic correlations in low-dimensional systems. Here, we present a comprehensive temperature-dependent Raman spectroscopy study of a layered antiferromagnetic semiconductor MnSi_2Te_4, which exhibits large negative magnetoresistance. Several Raman modes exhibit pronounced and mode-selective anomalies in frequency, linewidth, and intensity near the antiferromagnetic Néel temperature (18.6 K) and a possible hidden phase transition temperature (100 K), whereby deviations from Curie-Weiss behavior in magnetic susceptibility were previously reported. Angle-resolved polarized Raman spectroscopy (ARPRS) measurements reveal distinct polarization-dependent responses for different Raman modes. These results indicate a nontrivial coupling between lattice vibrations and magnetic ordering in MnSi_2Te_4, and demonstrate Raman spectroscopy as an effective probe of structural phase transition and spin-lattice coupling in van der Waals magnets.
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