Cite this article:
Jiayi Wang, Qiuchen Yu, Hui Guo, Peng Fan, Siyu Xu, Yixuan Gao, Hui Chen, Hong-Jun Gao. Epitaxial growth of quasi-one-dimensional TaNi2Se2 monolayer with anisotropic electronic and mechanical propertiesJ. Chin. Phys. B, 2026, 35(7): 077303.
| Jiayi Wang, Qiuchen Yu, Hui Guo, Peng Fan, Siyu Xu, Yixuan Gao, Hui Chen, Hong-Jun Gao. Epitaxial growth of quasi-one-dimensional TaNi2Se2 monolayer with anisotropic electronic and mechanical propertiesJ. Chin. Phys. B, 2026, 35(7): 077303. |
Epitaxial growth of quasi-one-dimensional TaNi2Se2 monolayer with anisotropic electronic and mechanical properties
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Abstract
Quasi-one-dimensional (quasi-1D) van der Waals layered materials have garnered significant interest for their intrinsic in-plane anisotropy and potential applications in low-dimensional quantum devices. Here, we report the realization of a quasi-1D TaNi2Se2 monolayer with pronounced anisotropic electronic and mechanical properties. The monolayer TaNi2Se2 is synthesized on a graphite substrate via van der Waals epitaxy. Using low-temperature scanning tunneling microscopy/spectroscopy, we reveal the characteristic quasi-1D chain-like lattice structure and confirm the intrinsic metallic nature of the monolayer TaNi2Se2. Notably, the electronic states exhibit a pronounced quasi-1D modulation that follows the chain structure, indicating strong electronic anisotropy. First-principles calculations further confirm the structural stability and provide signatures of anisotropic in-plane mechanical properties, as well as possible topological edge states arising from spin–orbit coupling. Our findings establish monolayer TaNi2Se2 as a novel quasi-1D van der Waals material and provide a promising platform for exploring anisotropy-driven quantum phenomena and device applications. -
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