Influence of silicon ion implantation on the morphological features, structural properties, optical, and electrical behavior of CR-39 polymers

The variations in morphological features, structural properties, optical characteristics, and electrical behavior induced by 610-keV Si ions in the CR-39 matrix have been investigated in the current research work. Polymer targets were irradiated with Si ions for various fluences spanning from 5 × 10¹³ ions/cm² to 35 × 10¹⁶ ions/cm². The implantation of ions in the polymeric target generally leads to chain scission, bond breaking, and cross-linking, along with the formation of free radicals and ions. To confirm these effects, various characterization techniques have been utilized. Optical microscopy reveals the creation of micro-cavities and cracks along the grain boundaries. Confocal microscopy demonstrates the formation of micro-sized hillocks. The formation of SiC phase at 890 cm⁻¹ following ion implantation was identified by Raman spectroscopy. Furthermore, in CR-39, a significant reduction in optical transmittance in the visible region is attributable to the formation of Si and carbonaceous clusters on the target surface. The enhancement in the electrical conductivity of the Si ion implanted polymer with an increase in ion fluence is attributable to fine crystallinity and the development of SiC bridges. The assessed temperature of the surface of the implanted polymer ranges from 2.2 × 10⁴ K to 6.2 × 10⁴ K. The LET (total linear energy transfer) value of 610-keV implanted ions and their depth are 63 eV/Å and 1.11 μm recorded in CR-39, respectively, estimated by SRIM simulation. The improved morphological features, structural properties, optical characteristics, and electrical behavior of CR-39 make it beneficial for applications in packaging and electronic industries, medical sciences, and photonic devices.