Heavy-ions-induced failure mechanisms and structural damage in SiC MOSFETs under complex irradiation conditions

The failure mechanisms and structural damage of SiC MOSFETs induced by heavy ion irradiation were demonstrated. The findings reveal three degradation modes, depending on the drain voltage. At a relatively low voltage, the damage is triggered by the formation and activation of gate latent damage (LDs), with damage concentrated in the gate oxide. The second degradation mode involves permanent leakage current degradation, with damage progressively transitioning from the oxide to the SiC material as the drain voltage escalates. Ultimately, the device undergoes catastrophic burnout above certain voltages, characterized by the lattice temperature reaching the sublimation point of SiC, resulting in surface cavity and complete structural destruction. This paper presents a comprehensive investigation of SiC MOSFETs under heavy ion exposure, providing radiation resistance methods of SiC-based devices for aerospace applications.