Planar Hall effect without chiral anomaly in layered topological semimetal candidate GaGeTe

We systematically investigate the planar transport properties of the two-dimensional layered compound GaGeTe. The results reveal distinct anisotropies in both the longitudinal and planar Hall resistances as the magnetic field is rotated within the plane, which are well-captured by the planar Hall effect (PHE) model. Further analysis indicates that the primary contribution to the PHE in GaGeTe arises from its ferromagnetic component and anisotropic orbital resistance, rather than topologically nontrivial chiral anomaly. This work deepens our understanding of the PHE mechanism and offers valuable insights for the development of planar Hall sensors based on two-dimensional materials.