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    Yiping Gao, Chenchen Liu, Can Tian, Chengcheng Zhu, Xiaoli Huang, Tian Cui. Pressure-induced structural transitions and metallization in ZrSe2J. Chin. Phys. B, 2024, 33(12): 126104.
    Yiping Gao, Chenchen Liu, Can Tian, Chengcheng Zhu, Xiaoli Huang, Tian Cui. Pressure-induced structural transitions and metallization in ZrSe2J. Chin. Phys. B, 2024, 33(12): 126104.
  • Pressure-induced structural transitions and metallization in ZrSe2

    • High-pressure studies of two-dimensional materials have revealed numerous novel properties and physical mechanisms behind them. As a typical material of transition metal dichalcogenides (TMDs), ZrSe2 exhibits high carrier mobility, rich electronic states regulated by doping, and high potential in applications at ambient pressure. However, the properties of ZrSe2 under pressure are still not clear, especially for the structural and electrical properties. Here, we report the investigation of ZrSe2 under pressure up to 66.5 GPa by in-situ x-ray diffraction, Raman, electrical transport measurements, and first-principles calculations. Two structural phase transitions occur in ZrSe2 at 8.3 GPa and 31.5 GPa, from P-3m1 symmetry to P21/m symmetry, and finally transformed into a non-layer I4/mmm symmetry structure. Pressure-induced metallic transition is observed at around 19.4 GPa in phase II which aligns well with the results of the calculation. Our work will help to improve the understanding of the evolution of the structure and electrical transport properties of two-dimensional materials.
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