Cite this article:
Xueqin Zhao, Jinou Dong, Rufei Zhang, Qiaolin Yang, Lingfeng Xie, Licheng Fu, Yilun Gu, Xun Pan, Fanlong Ning. Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbOJ. Chin. Phys. B, 2023, 32(12): 127502.
| Xueqin Zhao, Jinou Dong, Rufei Zhang, Qiaolin Yang, Lingfeng Xie, Licheng Fu, Yilun Gu, Xun Pan, Fanlong Ning. Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbOJ. Chin. Phys. B, 2023, 32(12): 127502. |
Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO
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Abstract
We report the successful fabrication of a new 1111-type bulk magnetic semiconductor (La,Ba)(Zn,Mn)SbO through the solid solution of (La,Ba) and (Zn,Mn) in the parent compound LaZnSbO. The polycrystalline samples (La,Ba)(Zn,Mn)SbO crystallize into ZrCuSiAs-type tetragonal structure, which has the same structure as iron-based superconductor LaFeAsO1–δ. The DC magnetization measurements indicate the existence of spin-glass ordering, and the coercive field is up to ∼11500 Oe (1 Oe = 79.5775 A⋅m−1). The AC magnetic susceptibility further determines that the samples evolve into a conventional spin-glass ordering state below the spin freezing temperature Tf. In addition, the negative magnetoresistance (MR ≡ ρ(H)–ρ(0)/ρ(0)) reaches −88% under 9 T. -
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