Simulation of optical and electrical synaptic functions in MoS₂/α-In₂Se₃ heterojunction memtransistors

Memtransistors combine memristors and field-effect transistors, which can introduce multi-port control and have significant applications for enriching storage methods. In this paper, multilayer α-In₂Se₃ and MoS₂ were transferred to the substrate by the mechanical exfoliation method, then a heterojunction MoS₂/α-In₂Se₃ memtransistor was prepared. Neural synaptic simulations were performed using electrical and optical pulses as input signals. Through measurements, such as excitatory/inhibitory post-synaptic current (EPSC/IPSC), long-term potentiation/depression (LTP/LTD), and paired-pulse facilitation/depression (PPF/PPD), it can be found that the fabricated device could simulate various functions of neural synapses well, and could work as an electronic synapse in artificial neural networks, proposing a possible solution for neuromorphic storage and computation.