Flat band in hole-doped transition metal dichalcogenide observed by angle-resolved photoemission spectroscopy

Layered transition metal dichalcogenides (TMDCs) gained widespread attention because of their electron-correlation-related physics, such as charge density wave (CDW), superconductivity, etc. In this paper, we report the high-resolution angle-resolved photoemission spectroscopy (ARPES) studies on the electronic structure of Ti-doped 1T-Ti_xTa_1–xS₂ with different doping levels. We observe a flat band that originates from the formation of the star of David super-cell at the x = 5% sample at the low temperature. With the increasing Ti doping levels, the flat band vanishes in the x = 8% sample due to the extra hole carrier. We also find the band shift and variation of the CDW gap caused by the Ti-doping. Meanwhile, the band folding positions and the CDW vector q_CDW are intact. Our ARPES results suggest that the localized flat band and the correlation effect in the 1T-TMDCs could be tuned by changing the filling factor through the doping electron or hole carriers. The Ti-doped 1T-Ti_xTa_1–xS₂ provides a platform to fine-tune the electronic structure evolution and a new insight into the strongly correlated physics in the TMDC materials.