Strain compensated type II superlattices grown by molecular beam epitaxy

We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick InAs/AlSb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the InAs sublayer was equal to the compressive strain energy in the AlSb sublayer. For the four-constituent active region, as the compressive strain in the Ga _0.65In _0.35Sb alloy layer was large, a tensile strain was incorporated in the chirped InAs/AlSb superlattice region for strain compensation to the Ga _0.65In _0.35Sb alloy. A laser structure of thickness 6 μm was grown on the GaSb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.