High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors

Threshold switching (TS) memristors can be used as artificial neurons in neuromorphic systems due to their continuous conductance modulation, scalable and energy-efficient properties. In this paper, we propose a low power artificial neuron based on the Ag/MXene/GST/Pt device with excellent TS characteristics, including a low set voltage (0.38 V) and current (200 nA), an extremely steep slope (< 0.1 mV/dec), and a relatively large off/on ratio (> 10 ³). Besides, the characteristics of integrate and fire neurons that are indispensable for spiking neural networks have been experimentally demonstrated. Finally, its memristive mechanism is interpreted through the first-principles calculation depending on the electrochemical metallization effect.