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    Yong Zhang, Xinliang Huang, Jinglei Zhang, Wenshuai Gao, Xiangde Zhu, Li Pi. Intrinsic V vacancy and large magnetoresistance in V1-δSb2 single crystalJ. Chin. Phys. B, 2022, 31(3): 037102.
    Yong Zhang, Xinliang Huang, Jinglei Zhang, Wenshuai Gao, Xiangde Zhu, Li Pi. Intrinsic V vacancy and large magnetoresistance in V1-δSb2 single crystalJ. Chin. Phys. B, 2022, 31(3): 037102.
  • Intrinsic V vacancy and large magnetoresistance in V1-δSb2 single crystal

    • The binary pnictide semimetals have attracted considerable attention due to their fantastic physical properties that include topological effects, negative magnetoresistance, Weyl fermions, and large non-saturation magnetoresistance. In this paper, we have successfully grown the high-quality V1-δSb2 single crystals by Sb flux method and investigated their electronic transport properties. A large positive magnetoresistance that reaches 477% under a magnetic field of 12 T at T = 1.8 K was observed. Notably, the magnetoresistance showed a cusp-like feature at the low magnetic fields and such feature weakened gradually as the temperature increased, which indicated the presence of a weak antilocalization effect (WAL). In addition, based upon the experimental and theoretical band structure calculations, V1-δSb2 is a research candidate for a flat band.
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