High linearity AlGaN/GaN HEMT with double-V_th coupling for millimeter-wave applications

We demonstrated an AlGaN/GaN high electron mobility transistor (HEMT) namely double-V_th coupling HEMT (DVC-HEMT) fabricated by connecting different threshold voltage (V_th) values including the slant recess element and planar element in parallel along the gate width with N₂O plasma treatment on the gate region. The comparative studies of DVC-HEMT and Fin-like HEMT fabricated on the same wafer show significantly improved linearity of transconductance (G_m) and radio frequency (RF) output signal characteristics in DVC-HEMT. The fabricated device shows the transconductance plateau larger than 7 V, which yields a flattened f_T/f_max-gate bias dependence. At the operating frequency of 30 GHz, the peak power-added efficiency (PAE) of 41% accompanied by the power density (P_out) of 5.3 W/mm. Furthermore, the proposed architecture also features an exceptional linearity performance with 1-dB compression point (P_{1 dB}) of 28 dBm, whereas that of the Fin-like HEMT is 25.2 dBm. The device demonstrated in this article has great potential to be a new paradigm for millimeter-wave application where high linearity is essential.