Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque (SOT) effect. However, the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process, or the non-electric approach of Kerr imaging technique. Here, we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic field. In this case, the symmetry of MR is broken, resulting in a resistance difference for opposite magnetization orientations. Moreover, the feasibility of our method is widely evidenced in heavy metal/ferromagnet (Pt/Ni₂₀Fe₈₀ and W/Co₂₀Fe₆₀B₂₀) and the topological insulator/ferromagnet (Bi₂Se₃/Ni₂₀Fe₈₀). Our work simplifies the characterization process of the in-plane magnetization switching, which can promote the development of SOT-based devices.