Stress and strain analysis of Si-based Ⅲ-V template fabricated by ion-slicing

Strain and stress were simulated using finite element method (FEM) for three Ⅲ-V-on-Insulator (Ⅲ-VOI) structures, i.e., InP/SiO₂/Si, InP/Al₂O₃/SiO₂/Si, and GaAs/Al₂O₃/SiO₂/Si, fabricated by ion-slicing as the substrates for optoelectronic devices on Si. The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy. Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness. The intermedia Al₂O₃ layer was intended to increase the adherence while it brings in the largest risk. The simulated results reveal thermal stress on Al₂O₃ over 1 GPa, which is much higher than its critical stress for interfacial fracture. InPOI without an Al₂O₃ layer is more suitable as the substrate for optoelectronic integration on Si.