Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃

A solar-blind photodetector is fabricated on single crystal Ga₂O₃ based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet (UV) transmittance. The quantum efficiency is about 400% at 42 V. The Ga₂O₃ photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible (=3213) and solar-blind/UV (=834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature (RT) to 85.8℃. The photodetector maintains a high reversibility and response speed, even at high temperatures.