Electronic dynamic behavior in inductively coupled plasmas with radio-frequency bias

The inflexion point of electron density and effective electron temperature curves versus radio-frequency (RF) bias voltage is observed in the H mode of inductively coupled plasmas (ICPs). The electron energy probability function (EEPF) evolves first from a Maxwellian to a Druyvesteyn-like distribution, and then to a Maxwellian distribution again as the RF bias voltage increases. This can be explained by the interaction of two distinct bias-induced mechanisms, that is: bias-induced electron heating and bias-induced ion acceleration loss and the decrease of the effective discharge volume due to the sheath expansion. Furthermore, the trend of electron density is verified by a fluid model combined with a sheath module.